MPS8550
MPS8550
C
B
TO-92
E
PNP General Purpose Amplifier
This device is designed for general purpose audio amplifier applications
at collector currents to 500 mA. Sourced from Process 60.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
25
40
6.0
800
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
MPS8550
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation
MPS8550
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Colector-Cutoff Current
I
C
= 30 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
V
CB
= 35 V, I
E
= 0
V
CE
= 20 V, I
E
= 0
25
40
6.0
0.1
75
V
V
V
µA
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 5.0 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 800 mA, V
CE
= 1.0 V
I
C
= 800 mA, I
B
= 80 mA
I
C
= 800 mA, I
B
= 80 mA
45
85
40
300
0.5
1.2
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
600
V
CESAT
- COLLECTOR EMITTE R VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β
= 10
V
CE
= 1V
500
400
300
200
100
25 °C
125 °C
3
0.6
0.4
- 40 °C
25 °C
- 40 °C
0.2
125 °C
1
I
C
10
100
- COLLECTOR CURRENT (A)
1000
0
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
1.2
β
= 10
V
BE( ON)
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
- 40 °C
1
- 40 °C
0.8
0.6
0.4
0.2
0
V
CE
= 1V
25 °C
125 °C
0.8
25 °C
125 °C
0.6
0.4
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
1000
MPS8550
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
10
V
CB
= 35V
1
80
60
Input and Output Capacitance
vs Reverse Voltage
f = 1.0 MHz
CAPACITANCE (pF)
35
0.1
20
15
10
C
ib
0.01
C
ob
0.001
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
5
0.1
1
10
100
V
CE
- COLLECTOR VOLTAGE(V)
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product
vs Collector Current
V
CE
= 1V
1400
BV
CER
- BREAKDOWN VOLTAGE (V)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
38
37
36
35
34
33
32
0.1
1200
1000
800
600
400
200
0
1
10
20
50
100
150 200
1
10
100
1000
I
C
- COLLECTOR CURRENT (mA)
RESISTANCE (k
Ω
)
Power Dissipation vs
Ambient Temperature
700
P
D
- POWER DISSIPATION (mW)
600
500
400
300
200
100
0
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
TO-92
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration:
Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
HTB:B
QTY:
10000
See Fig 2.0 for various
Reeling Styles
NSID:
PN2222N
SPEC:
D/C1:
D9842
SPEC REV:
QA REV:
B2
FSCINT
Label
(FSCINT)
5 Reels per
Intermediate Box
F63TNR
Label
Customized
Label
375mm x 267mm x 375mm
Intermediate Box
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842
D/C2:
QTY1:
QTY2:
QTY: 2000
SPEC:
SPEC REV:
CPN:
N/F: F
Customized
Label
(F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Reel
Style
A
E
Ammo
M
P
Quantity
2,000
2,000
2,000
2,000
EOL code
D26Z
D27Z
D74Z
D75Z
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
Unit weight
= 0.22 gm
Reel weight with components
= 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
FSCINT
Label
327mm x 158mm x 135mm
Immediate Box
Customized
Label
5 Ammo boxes per
Intermediate Box
F63TNR
Label
333mm x 231mm x 183mm
Intermediate Box
Customized
Label
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
TO-18 OPTION STD
TO-5 OPTION STD
TO-92 STANDARD
STRAIGHT
LEADCLIP
DIMENSION
NO LEAD CLIP
NO LEAD CLIP
NO LEADCLIP
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
Anti-static
Bubble Sheets
FSCINT Label
2000 units per
EO70 box for
std option
114mm x 102mm x 51mm
Immediate Box
5 EO70 boxes per
intermediate Box
530mm x 130mm x 83mm
Intermediate box
Customized
Label
FSCINT Label
10,000 units maximum
per intermediate box
for std option
©2000 Fairchild Semiconductor International
September 1999, Rev. B
TO-92 Tape and Reel Data, continued
TO-92 Reeling Style
Configuration:
Figure 2.0
Machine Option “A” (H)
Machine Option “E” (J)
Style “A”, D26Z, D70Z (s/h)
Style “E”, D27Z, D71Z (s/h)
TO-92 Radial Ammo Packaging
Configuration:
Figure 3.0
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
September 1999, Rev. B