IC42S16101-7TIG datasheet, PDF

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IC42S16101-7TIG: DescriptionSynchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50; Categorystorage storage; File Size760KB，78 Pages; ManufacturerIntegrated Silicon Solution ( ISSI ); Environmental Compliance

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IC42S16101-7TIG Overview

Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50

IC42S16101-7TIG Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SOP, TSOP50,.46,32
Reach Compliance Code	compliant
access mode	DUAL BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	143 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G50
JESD-609 code	e3
memory density	16777216 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	50
word count	1048576 words
character code	1000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	TSOP50,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.14 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Base Number Matches	1

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IC42S16101

Document Title

512K x 16 Bit x 2 Banks (16-MBIT) SDRAM

Revision History

Revision No

History

Initial Draft

Change t

from 2.5 ns to 2.2 ns

Add 60 ball(16M SDRAM) VF-BGA package

Add Pb-free package

Add speed grade -5ns

Obselte speed grade -8ns

Revise typo

Draft Date

Remark

August 28,2001

April 15,2002

September 05,2003

December 02,2003

July 01,2004

January 17,2005

The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and

products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.

Integrated Circuit Solution Inc.

DR025-0F 01/17/2005

IC42S16101-7TIG Related Products

	IC42S16101-7TIG	IC42S16101-6BG	IC42S16101-6BIG	IC42S16101-6TG	IC42S16101-6TIG	IC42S16101-7BIG	IC42S16101-5BIG
Description	Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50	Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, LEAD FREE, VFBGA-60	Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, LEAD FREE, VFBGA-60	Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50	Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50	Synchronous DRAM, 1MX16, 6ns, CMOS, PBGA60, LEAD FREE, VFBGA-60	Synchronous DRAM, 1MX16, 4.5ns, CMOS, PBGA60, LEAD FREE, VFBGA-60
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	SOP, TSOP50,.46,32	BGA, BGA60,7X15,25	BGA, BGA60,7X15,25	SOP, TSOP50,.46,32	SOP, TSOP50,.46,32	BGA, BGA60,7X15,25	BGA, BGA60,7X15,25
Reach Compliance Code	compliant	compli	compli	compli	compli	compli	compli
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	6 ns	5.5 ns	5.5 ns	5.5 ns	5.5 ns	6 ns	4.5 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	143 MHz	166 MHz	166 MHz	166 MHz	166 MHz	143 MHz	200 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G50	R-PBGA-B60	R-PBGA-B60	R-PDSO-G50	R-PDSO-G50	R-PBGA-B60	R-PBGA-B60
JESD-609 code	e3	e1	e1	e3	e3	e1	e1
memory density	16777216 bit	16777216 bi	16777216 bi	16777216 bi	16777216 bi	16777216 bi	16777216 bi
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1
Number of terminals	50	60	60	50	50	60	60
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	85 °C	70 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-	-40 °C	-	-40 °C	-40 °C	-40 °C
organize	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOP	BGA	BGA	SOP	SOP	BGA	BGA
Encapsulate equivalent code	TSOP50,.46,32	BGA60,7X15,25	BGA60,7X15,25	TSOP50,.46,32	TSOP50,.46,32	BGA60,7X15,25	BGA60,7X15,25
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	GRID ARRAY	GRID ARRAY	SMALL OUTLINE	SMALL OUTLINE	GRID ARRAY	GRID ARRAY
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096	4096
self refresh	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.14 mA	0.145 mA	0.145 mA	0.145 mA	0.145 mA	0.14 mA	0.15 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	GULL WING	BALL	BALL	GULL WING	GULL WING	BALL	BALL
Terminal pitch	0.8 mm	0.635 mm	0.635 mm	0.8 mm	0.8 mm	0.635 mm	0.635 mm
Terminal location	DUAL	BOTTOM	BOTTOM	DUAL	DUAL	BOTTOM	BOTTOM
Maker	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )

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