SO
D3
23F
TDZxJ series
Single Zener diodes
Rev. 2 — 29 July 2011
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Non-repetitive peak reverse power
dissipation:
180 W
Total power dissipation:
500 mW
Very small plastic package suitable for
surface-mounted design
Low differential resistance
AEC-Q101 qualified
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
tot
[1]
[2]
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
I
F
= 100 mA
T
amb
25
C
[1]
[2]
Min
-
-
Typ
-
-
Max
1.1
500
Unit
V
mW
Pulse test: t
p
300
s;
0.02.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 16 mm
2
.
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Graphic symbol
1
2
006aaa152
[1]
The marking bar indicates the cathode.
NXP Semiconductors
TDZxJ series
Single Zener diodes
3. Ordering information
Table 3.
Ordering information
Package
Name
TDZxJ series
SC-90
Description
plastic surface-mounted package; 2 leads
Version
SOD323F
Type number
4. Marking
Table 4.
TDZ2V4J
TDZ2V7J
TDZ3V0J
TDZ3V3J
TDZ3V6J
TDZ3V9J
TDZ4V3J
TDZ4V7J
TDZ5V1J
TDZ5V6J
TDZ6V2J
TDZ6V8J
TDZ7V5J
TDZ8V2J
Marking codes
Marking code
3A
3B
3C
3D
3E
3F
3G
3H
3J
JQ
3K
3L
3N
3P
Type number
TDZ9V1J
TDZ10J
TDZ11J
TDZ12J
TDZ13J
TDZ15J
TDZ16J
TDZ18J
TDZ20J
TDZ22J
TDZ24J
TDZ27J
TDZ30J
-
Marking code
3Q
3R
3S
3T
3U
3V
3W
3Y
3Z
4A
4B
4C
4D
-
Type number
TDZXJ_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 July 2011
2 of 12
NXP Semiconductors
TDZxJ series
Single Zener diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak
reverse current
non-repetitive peak
reverse power dissipation
TDZ2V4J to TDZ5V6J
TDZ6V2J to TDZ6V8J
TDZ7V5J to TDZ30J
P
tot
T
j
T
amb
T
stg
[1]
[2]
[1]
Conditions
Min
-
-
Max
250
see
Table 8
and
10
Unit
mA
P
ZSM
[1]
-
-
-
T
amb
25
C
[2]
180
100
40
500
150
+150
+150
W
W
W
mW
C
C
C
total power dissipation
junction temperature
ambient temperature
storage temperature
-
-
55
65
t
p
= 100
s;
square wave; T
j
= 25
C
before surge.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 16 mm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
250
25
Unit
K/W
K/W
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 16 mm
2
.
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 10 mA
I
F
= 100 mA
[1]
Pulse test: t
p
300
s;
0.02.
Conditions
[1]
Min
-
-
Typ
-
-
Max
0.9
1.1
Unit
V
V
TDZXJ_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 July 2011
3 of 12
NXP Semiconductors
TDZxJ series
Single Zener diodes
Table 8.
Characteristics per type; Zener TDZ2V4J to Zener TDZ24J
T
j
= 25
C unless otherwise specified.
TDZxxxJ Working voltage
V
Z
(V)
Differential
resistance
r
dif
()
I
Z
= 5 mA
Min
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
[1]
[2]
Reverse current Temperature
coefficient
I (A)
R
Diode
capacitance
C
d
(pF)
[1]
S
Z
(mV/K)
I
Z
= 5 mA
Max
50
20
10
5
5
3
3
3
2
10
3
2
1
0.70
0.50
0.20
0.10
0.10
0.10
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.5
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
Min
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
2.7
2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10
11
13
14
16
18
20
22
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
= 1 mA I
Z
= 5 mA
Max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.4
20.4
22.4
24.5
Max
400
450
500
500
500
500
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
Max
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
20
20
20
25
30
Max
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
108
105
103
99
97
93
88
84
80
Max
15
15
15
15
15
15
15
15
15
15
12
12
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.5
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.6
19.6
21.6
23.5
f = 1 MHz; V
R
= 0 V
t
p
= 100
s;
square wave; T
j
= 25
C
before surge.
Table 9.
Characteristics per type; Zener TDZ5V6J
T
j
= 25
C unless otherwise specified.
TDZxxxJ
Working voltage
V
Z
(V)
I
Z
= 10 mA
Min
5V6
5.20
Max
6.00
Differential resistance
r
dif
()
I
Z
= 0.5 mA
Max
500
I
Z
= 10 mA
Max
7
Temperature coefficient
S
Z
(mV/K)
I
Z
= 5 mA
Min
1.7
Max
2.8
TDZXJ_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 July 2011
4 of 12
NXP Semiconductors
TDZxJ series
Single Zener diodes
Table 10. Characteristics per type; Zener TDZ27J to Zener TDZ30J
T
j
= 25
C unless otherwise specified.
TDZxxxJ Working voltage
V
Z
(V)
Differential resistance Reverse
current
r ()
dif
Temperature
coefficient
S
Z
(mV/K)
I
Z
= 2 mA
Diode
capacitance
C
d
(pF)
[1]
I
R
(A)
I
Z
= 2 mA
Min
27
30
[1]
[2]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
= 0.5 mA I
Z
= 2 mA
Max
27.5
30.6
Max
250
250
Max
40
40
Max
0.05
0.05
V
R
(V)
18.9
21
Min
21.4
24.4
Max
25.3
29.4
Max
73
66
Max
1
1
26.5
29.4
f = 1 MHz; V
R
= 0 V
t
p
= 100
s;
square wave; T
j
= 25
C
before surge.
10
3
P
ZSM
(W)
10
2
(1)
(2)
(3)
006aac671
300
I
F
(mA)
200
mbg781
10
(4)
100
1
10
–4
10
–3
t
p
(s)
10
–2
0
0.6
0.8
V
F
(V)
1
(1) TDZ2V4J to TDZ5V6J
(2) TDZ6V2J to TDZ6V8J
(3) TDZ7V5J to TDZ30J; T
j
= 25
C
before surge
(4) TDZ7V5J to TDZ30J; T
j
= 150
C
before surge
T
j
= 25
C
Fig 1.
Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Fig 2.
Forward current as a function of forward
voltage; typical values
TDZXJ_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 July 2011
5 of 12
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