Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
| Parameter Name | Attribute value |
| package instruction | , |
| Reach Compliance Code | unknown |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 10 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 200 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 180 W |
| surface mount | NO |
| Base Number Matches | 1 |
| F3003 | F3005 | F3006 | F3002 | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Configuration | Single | Single | Single | Single |
| Maximum drain current (Abs) (ID) | 10 A | 10 A | 20 A | 40 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 180 W | 160 W | 220 W | 500 W |
| surface mount | NO | NO | NO | NO |
| Base Number Matches | 1 | 1 | 1 | - |