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F3006

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size99KB,1 Pages
ManufacturerPolycore Rf Devices
Download Datasheet Parametric Compare View All

F3006 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

F3006 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)20 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)220 W
surface mountNO
Base Number Matches1

F3006 Related Products

F3006 F3003 F3005 F3002
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Reach Compliance Code unknown unknown unknown unknown
Configuration Single Single Single Single
Maximum drain current (Abs) (ID) 20 A 10 A 10 A 40 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 220 W 180 W 160 W 500 W
surface mount NO NO NO NO
Base Number Matches 1 1 1 -
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