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RB228T-30FH

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size998KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RB228T-30FH Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN

RB228T-30FH Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.72 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage35 V
Maximum reverse current10 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Schottky Barrier Diode
RB228T-30FH
lApplication
Switching power supply
10.0±
0.3
0.1
f3.2±0.2
15.0±
0.4
0.2
Data
Sheet
AEC-Q101 Qualified
lDimensions
(Unit : mm)
4.5±
0.3
0.1
2.8±
0.2
0.1
lStructure
lFeatures
1) Cathode common dual type
2) High reliability
3) Super low I
R
1
8.0±0.2
12.0±0.2
lConstruction
Silicon epitaxial planar type
lAbsolute
Maximum Ratings
(T
c
= 25°C)
Parameter
ec
N
ew om
m
D
es en
ig de
ns d
f
1.3
0.8
14.0±0.5
1.2
5.0±0.2
2.6±0.5
0.1
0.75±
0.05
2.45±0.5 2.45±0.5
(1) (2) (3)
ROHM : TO220FN
1
: Manufacture date
lPacking
Dimensions
(Unit : mm)
7
540
Symbol
V
RM
V
R
I
o
34.5
Conditions
Duty≦0.5
R
Repetitive peak reverse voltage
Reverse voltage
or
Limits
35
30
30
100
150
-55
to
+150
-
-
Min.
-
-
-
-
-
-
0.72
10
2
(1)
(2)
(3)
Cathode Anode
Anode
Unit
V
V
A
A
°C
°C
Direct reverse voltage
ot
Average forward rectified current
Non-repetitive forward current surge peak
I
FSM
T
j
T
stg
60Hz half sin wave, resistive load,
I
O
/2 per diode, T
c
=100ºC Max.
60Hz half sin wave, Non-repetitive at
T
a
=25ºC , 1cycle, per diode
N
Operating junction temperature
Storage temperature
lElectrical
and Thermal Characteristics
(T
j
= 25°C)
Parameter
Forward voltage
Reverse current
Thermal resistance
Symbol
V
F
I
R
R
th(j-c)
Conditions
I
F
=15A
V
R
=30V
Junction to case
Typ. Max. Unit
V
mA
°C/W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.01 - Rev.A

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