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RB228T-30FHC9

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size998KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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RB228T-30FHC9 Overview

Rectifier Diode,

RB228T-30FHC9 Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
Diode typeRECTIFIER DIODE
Base Number Matches1
Schottky Barrier Diode
RB228T-30FH
lApplication
Switching power supply
10.0±
0.3
0.1
f3.2±0.2
15.0±
0.4
0.2
Data
Sheet
AEC-Q101 Qualified
lDimensions
(Unit : mm)
4.5±
0.3
0.1
2.8±
0.2
0.1
lStructure
lFeatures
1) Cathode common dual type
2) High reliability
3) Super low I
R
1
8.0±0.2
12.0±0.2
lConstruction
Silicon epitaxial planar type
lAbsolute
Maximum Ratings
(T
c
= 25°C)
Parameter
ec
N
ew om
m
D
es en
ig de
ns d
f
1.3
0.8
14.0±0.5
1.2
5.0±0.2
2.6±0.5
0.1
0.75±
0.05
2.45±0.5 2.45±0.5
(1) (2) (3)
ROHM : TO220FN
1
: Manufacture date
lPacking
Dimensions
(Unit : mm)
7
540
Symbol
V
RM
V
R
I
o
34.5
Conditions
Duty≦0.5
R
Repetitive peak reverse voltage
Reverse voltage
or
Limits
35
30
30
100
150
-55
to
+150
-
-
Min.
-
-
-
-
-
-
0.72
10
2
(1)
(2)
(3)
Cathode Anode
Anode
Unit
V
V
A
A
°C
°C
Direct reverse voltage
ot
Average forward rectified current
Non-repetitive forward current surge peak
I
FSM
T
j
T
stg
60Hz half sin wave, resistive load,
I
O
/2 per diode, T
c
=100ºC Max.
60Hz half sin wave, Non-repetitive at
T
a
=25ºC , 1cycle, per diode
N
Operating junction temperature
Storage temperature
lElectrical
and Thermal Characteristics
(T
j
= 25°C)
Parameter
Forward voltage
Reverse current
Thermal resistance
Symbol
V
F
I
R
R
th(j-c)
Conditions
I
F
=15A
V
R
=30V
Junction to case
Typ. Max. Unit
V
mA
°C/W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.01 - Rev.A

RB228T-30FHC9 Related Products

RB228T-30FHC9 RB228T-30FH
Description Rectifier Diode, Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN
Reach Compliance Code compliant compliant
Diode type RECTIFIER DIODE RECTIFIER DIODE
Base Number Matches 1 1

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