HSMP-383x
Surface Mount RF PIN Diodes
Data Sheet
Description/Applications
The HSMP-383x series of general purpose PIN diodes
are designed for two classes of applications. The first
is attenuators where current consumption is the most
important design consideration. The second application
for this series of diodes is in switches where low
capacitance is the driving issue for the designer.
The HSMP-386x series Total Capacitance (C
T
) and Total
Resistance (R
T
) are typical specifications. For applications
that require guaranteed performance, the general
purpose HSMP-383x series is recommended.
A SPICE model is not available for PIN diodes as SPICE
does not provide for a key PIN diode characteristic,
carrier lifetime.
Features
•
Diodes Optimized for:
Low Capacitance Switching
Low Current Attenuator
•
Surface Mount SOT-23 Package
Single and Dual Versions
Tape and Reel Options Available
•
Low Failure in Time (FIT) Rate
[1]
•
Lead-free
Note:
1. For more information see the Surface Mount PIN Reliability Data Sheet.
Package Lead Code Identification (Top View)
SINGLE
SERIES
#0
COMMON
ANODE
#2
COMMON
CATHODE
#3
#4
Absolute Maximum Ratings
[1]
T
C
= 25°C
Symbol
I
f
P
t
P
iv
T
j
T
STG
Parameter
Forward Current (1 ms Pulse)
Total Device Dissipation
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Units
Amp
mW
[2]
—
°C
°C
Absolute Maximum
1
250
Same as V
BR
150
-65 to 150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
this device.
2. CW Power Dissipation at T
LEAD
= 25°C. Derate to zero at maximum rated temperature.
PIN General Purpose Diodes, Electrical Specifications T
C
= 25°C
Part
Number
HSMP-
3830
3832
3833
3834
Package
Marking
Code
K0
K2
K3
K4
Lead
Code
0
2
3
4
Configuration
Single
Series
Common Anode
Common Cathode
Minimum
Breakdown
Voltage
V
BR
(V)
200
Maximum
Series
Resistance
R
S
(Ω)
1.5
Maximum
Total
Capacitance
C
T
(pF)
0.3
est Conditions
T
V
R
= V
BR
Measure
I
R
≤ 10 mA
I
F
= 100 mA
f = 100 MHz
V
R
= 50 V
f = 1 MHz
Typical Parameters at T
C
= 25°C
Part Number
HSMP-
383x
Series Resistance
R
S
(Ω)
20
I
F
= 1 mA
f = 100 MHz
Carrier Lifetime
τ
(ns)
500
I
F
= 50 mA
I
R
= 250 mA
Reverse Recovery Time
T
rr
(ns)
80
V
R
= 10 V
I
F
= 20 mA
90% Recovery
Total Capacitance
C
T
(pF)
0.20 @ 50 V
est Conditions
T
2
Typical Parameters at T
C
= 25°C (unless otherwise noted), Single Diode
100
0.35
1000
I
F
– FORWARD CURRENT (mA)
TOTAL CAPACITANCE (pF)
10
0.30
1 MHz
0.25
100 MHz
0.20
1 GHz
RF RESISTANCE (OHMS)
8
10 12 14 16 18 20
100
1
10
0.1
125C
0
0.2
0.4
25C
0.6
–50C
0.8
1.0
1.2
1
0.01
0.15
0
2
4
6
0.1
0.01
0.1
1
10
100
V
F
– FORWARD VOLTAGE (mA)
REVERSE VOLTAGE (V)
I
F
– FORWARD BIAS CURRENT (mA)
Figure 1. Forward Current vs. Forward Voltage.
Figure 2. RF Capacitance vs. Reverse Bias.
Figure 3. RF Resistance at 25C vs. Forward Bias Current.
INPUT INTERCEPT POINT (dBm)
INPUT INTERCEPT POINT (dBm)
Diode Mounted as a
110 Series Attenuator
in a 50 Ohm Microstrip
100 and Tested at 123 MHz
90
80
70
60
50
40
1000
100
10
T
rr
- REVERSE RECOVERY TIME (nS)
120
120
Diode Mounted as a
Series Attenuator in a
115
50 Ohm Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
1000
HSMP-3830
V
R
= 5V
100
V
R
= 10V
V
R
= 20V
1
10
30
10
10
20
FORWARD CURRENT (mA)
30
DIODE RF RESISTANCE ()
I
F
– FORWARD BIAS CURRENT (mA)
Figure 4. 2nd Harmonic Input Intercept Point vs.
Diode RF Resistance for Attenuators.
Figure 5. 2nd Harmonic Input Intercept Point vs.
Forward Bias Current for Switches.
Figure 6. Reverse Recovery Time vs. Forward Current
for Various Reverse Voltage.
3
Typical Applications for Multiple Diode Products
RF COMMON
RF COMMON
RF 1
RF 2
RF 1
RF 2
BIAS
BIAS
BIAS 1
BIAS 2
Figure 7. Simple SPDT Switch, Using Only Positive Current.
Figure 8. High Isolation SPDT Switch, Dual Bias.
RF COMMON
BIAS
RF COMMON
RF 1
RF 2
RF 1
BIAS
RF 2
Figure 9. Switch Using Both Positive and Negative Current.
Figure 10. Very High Isolation SPDT Switch, Dual Bias.
4
Typical Applications for Multiple Diode Products
(continued)
VARIABLE BIAS
INPUT
RF IN/OUT
FIXED
BIAS
VOLTAGE
Figure 11. Four Diode
π
Attenuator. See AN1048 for details.
BIAS
Figure 12. High Isolation SPST Switch (Repeat Cells as Required).
5
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