IRFE9024-JQR-B datasheet, PDF - EEWORLD Datasheet

IRFE9024-JQR-B: DescriptionPower Field-Effect Transistor, 5.4A I(D), 60V, 0.285ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15; CategoryDiscrete semiconductor The transistor; File Size71KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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IRFE9024-JQR-B Overview

Power Field-Effect Transistor, 5.4A I(D), 60V, 0.285ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CHIP CARRIER, R-CQCC-N15
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	5.4 A
Maximum drain-source on-resistance	0.285 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15
Number of terminals	15
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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