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US1K

Description
1 A, 800 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size38KB,1 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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US1K Overview

1 A, 800 V, SILICON, SIGNAL DIODE

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
US1A THRU US1K
ULTRAFAST RECTIFIER
VOLTAGE:50-800V
CURRENT:1.0A
FEATURES
·Low
power loss, high efficiency
·Low
leakage
·Low
forward voltage
·High
current capability
·High
speed switching
·High
surge capability
·High
reliability
SMA(DO-214AC)
.062(1.60)
.055(1.40)
.181(4.60)
.157(4.00)
.012(0.305)
.006(0.152)
.114(2.90)
.098(2.50)
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.064 grams
.096(2.44)
.078(2.00)
.060((1.52)
.030(0.76)
.008(0.203)
.002(0.051)
.208(5.28)
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
US1A
US1B
100
70
100
US1D
200
140
200
1.0
30
US1G
400
280
400
US1J
600
420
600
US1K
units
800
560
800
V
V
V
A
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at T
A
=50°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at 1.0A
DC
Maximum DC Reverse Current at Rated DC
Blocking Voltage T
A
=25°C
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
50
35
50
1.0
5.0
1.3
1.7
V
Maximum Full Load Reverse Current Full Cycle
Average,.375”(9.5mm) lead length at T
L
=75°C
t
rr
Maximum Reverse Recovery Time (Note 1)
C
J
Typical Junction Capacitance (Note 2)
Notes: 1.Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0 volts
I
R
µA
100
50
15
75
12
nS
pF
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