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UPG2012TB_1

Description
L-BAND SPDT SWITCH
File Size60KB,9 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPG2012TB_1 Overview

L-BAND SPDT SWITCH

DATA SHEET
GaAs INTEGRATED CIRCUIT
µ
PG2012TB
L-BAND SPDT SWITCH
DESCRIPTION
The
µ
PG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for
mobile phone and another L-band application.
This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface
mounting.
FEATURES
• Supply voltage
• Switch control voltage
• Low insertion loss
: V
DD
= 2.7 to 3.0 V (2.8 V TYP.)
: V
cont (H)
= 2.7 to 3.0 V (2.8 V TYP.)
: V
cont (L)
=
−0.2
to +0.2 V (0 V TYP.)
: L
INS1
= 0.27 dB TYP. @ f = 0.5 to 1.0 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V
: L
INS2
= 0.30 dB TYP. @ f = 2.0 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V
: L
INS3
= 0.30 dB TYP. @ f = 2.5 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V (Reference
value)
• High isolation
: ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V
: ISL2 = 25 dB TYP. @ f = 2.5 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V (Reference
value)
• High-density surface mounting : 6-pin super minimold package (2.0
×
1.25
×
0.9 mm)
APPLICATIONS
L-band digital cellular or cordless telephone
PCS, W-LAN, WLL and Bluetooth
TM
etc.
ORDERING INFORMATION
Part Number
Package
6-pin super minimold
Marking
G3A
Supplying Form
Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 3 kpcs/reel
µ
PG2012TB-E3
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PG2012TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10218EJ01V0DS (1st edition)
Date Published December 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002

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