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S29CD016J0PFAM100

Description
Flash, 512KX32, 54ns, PBGA80, BGA-80
Categorystorage    storage   
File Size1MB,86 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric View All

S29CD016J0PFAM100 Overview

Flash, 512KX32, 54ns, PBGA80, BGA-80

S29CD016J0PFAM100 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionBGA-80
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time54 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B80
JESD-609 codee0
length13 mm
memory density16777216 bit
Memory IC TypeFLASH
memory width32
Humidity sensitivity level3
Number of functions1
Number of departments/size16,30
Number of terminals80
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA80,8X10,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply1.8/2.6,2.6 V
Programming voltage2.7 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.4 mm
Department size2K,16K
Maximum standby current0.00006 A
Maximum slew rate0.09 mA
Maximum supply voltage (Vsup)2.75 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)2.6 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width11 mm
Base Number Matches1
S29CD032J
S29CD016J
S29CL032J
S29CL016J
32/16 Mbit, 2.6/3.3 V, Dual Boot,
Simultaneous Read/Write, Burst Flash
General Description
The Spansion S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process technology. These burst-
mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks,
using separate data and address pins. These products can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single V
CC
of 2.5V to 2.75V (S29CD-J) or 3.0V to 3.6V (S29CL-J) that make them ideal for today’s demanding automotive applications.
Distinctive Characteristics
110 nm Floating Gate Technology
Single 2.6V (S29CD-J) or 3.3V (S29CL-J) for read/program/erase
Simultaneous Read/Write operation with zero latency
x32 Data Bus
Dual Boot Sector Configuration (top and bottom)
Flexible Sector Architecture
– CD016J and CL016J: Eight 2k Double word, Thirty 16k Double
word, and Eight 2k Double Word sectors
– CD032J and CL032J: Eight 2k Double word, Sixty-two 16k
Double Word, and Eight 2k Double Word sectors
VersatileI/O™ control (1.65V to 3.6V)
Programmable Burst Interface
– Linear for 2, 4, and 8 double word burst with wrap around
Secured Silicon Sector that can be either factory or customer locked
20 year data retention (typical)
Cycling Endurance: 1 million write cycles per sector (typical)
Command set compatible with JEDEC (JC42.4) standard
Supports Common Flash Interface (CFI)
Extended Temperature range
Persistent and Password methods of Advanced Sector Protection
Unlock Bypass program command to reduce programming time
ACC input pin to reduce factory programming time
Data Polling bits indicate program and erase operation completion
Hardware (WP#) protection of two outermost sectors in the large
bank
Ready/Busy (RY/BY#) output indicates data available to system
Suspend and Resume commands for Program and Erase Operation
Offered Packages
– 80-pin PQFP
– 80-ball Fortified BGA (13 x 11 mm and 11 x 9mm versions)
– Pb-free package option available
– Known Good Die
Performance Characteristics
Read Access Times
Speed Option (MHz)
Max Asynch. Access Time, ns (t
ACC
)
Max Synch. Burst Access, ns (t
BACC
)
Min Initial Clock Delay (clock cycles)
Max CE# Access Time, ns (t
CE
)
Max OE# Access time, ns (t
OE
)
75
(32 Mb only)
54
8
5
54
20
66
54
8
5
54
20
56
54
8
5
54
20
40
54
8
4
54
20
Typical Program and Erase Times
Double Word Programming
Sector Erase
18 µs
1.0 s
Current Consumption (Max values)
Continuous Burst Read @ 75 MHz
Program
Erase
Standby Mode
90 mA
50 mA
50 mA
60 µA
Notice for the 32Mb S29CD-J and S29CL-J devices only:
Please refer to the application note “Recommended
Mode of Operation for Spansion
®
110 nm S29CD032J/S29CL032J Flash
Memory”
publication number
S29CD-CL032J_Recommend_AN
for programming best practices.
Cypress Semiconductor Corporation
Document Number: 002-00948 Rev. *A
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised December 16, 2015
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