HY5PS12821BLFP-S5 datasheet, PDF

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HY5PS12821BLFP-S5: DescriptionDDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60; Categorystorage storage; File Size623KB，38 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HY5PS12821BLFP-S5 Overview

DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60

HY5PS12821BLFP-S5 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	BGA
package instruction	TFBGA, BGA60,9X11,32
Contacts	60
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	400 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e1
length	10.5 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	60
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	95 °C
Minimum operating temperature
organize	64MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	10 mm
Base Number Matches	1

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HY5PS12421B(L)FP

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512Mb DDR2 SDRAM

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This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.7 / Oct. 2007

HY5PS12821BLFP-S5 Related Products

	HY5PS12821BLFP-S5	HY5PS12821BLFP-C4	HY5PS12821BLFP-S6	HY5PS12421BFP-Y4	HY5PS121621BLFP-E3	HY5PS121621BLFP-Y5	HY5PS121621BLFP-C4	HY5PS121621BLFP-Y4	HY5PS121621BFP-Y4
Description	DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 64MX8, 0.5ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84	DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84	DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84	DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84	DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32
Contacts	60	60	60	60	84	84	84	84	84
Reach Compliance Code	compliant	compliant	compliant	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.4 ns	0.5 ns	0.4 ns	0.45 ns	0.6 ns	0.45 ns	0.5 ns	0.45 ns	0.45 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	400 MHz	267 MHz	400 MHz	333 MHz	200 MHz	333 MHz	267 MHz	333 MHz	333 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	4,8	4,8	4,8	4,8	4,8	4,8	4,8	4,8	4,8
JESD-30 code	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B84	R-PBGA-B84	R-PBGA-B84	R-PBGA-B84	R-PBGA-B84
JESD-609 code	e1	e1	e1	e1	e1	e1	e1	e1	e1
length	10.5 mm	10.5 mm	10.5 mm	10.5 mm	13 mm	13 mm	13 mm	13 mm	13 mm
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	8	8	8	4	16	16	16	16	16
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	60	60	60	60	84	84	84	84	84
word count	67108864 words	67108864 words	67108864 words	134217728 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words
character code	64000000	64000000	64000000	128000000	32000000	32000000	32000000	32000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	95 °C	95 °C	95 °C	95 °C	95 °C	95 °C	95 °C	95 °C	95 °C
organize	64MX8	64MX8	64MX8	128MX4	32MX16	32MX16	32MX16	32MX16	32MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA60,9X11,32	BGA60,9X11,32	BGA60,9X11,32	BGA60,9X11,32	BGA84,9X15,32	BGA84,9X15,32	BGA84,9X15,32	BGA84,9X15,32	BGA84,9X15,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260	260
power supply	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192	8192
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	4,8	4,8	4,8	4,8	4,8	4,8	4,8	4,8	4,8
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	20	20	20	20	20	20	20	20	20
width	10 mm	10 mm	10 mm	10 mm	10.5 mm	10.5 mm	10.5 mm	10.5 mm	10.5 mm
Base Number Matches	1	1	1	1	1	1	1	1	1
Maximum standby current	-	0.008 A	-	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A
Maker	-	-	-	-	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix

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