APT5019HLL datasheet, PDF - EEWORLD Datasheet

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APT5019HLL: DescriptionPower Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size70KB，4 Pages; ManufacturerADPOW; Websitehttp://www.advancedpower.com/

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APT5019HLL Overview

Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

APT5019HLL Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	1300 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	21 A
Maximum drain-source on-resistance	0.19 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-258AA
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	84 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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APT5019HLL

500V 21A 0.190

Ω

POWER MOS 7

MOSFET

TO-258

Power MOS 7 is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7 by significantly lowering R

DS(ON)

and Q

. Power MOS 7 combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

MAXIMUM RATINGS

Symbol

DSS

GSM

STG

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

= 25°C

Pulsed Drain Current

• Increased Power Dissipation

• Easier To Drive

• Hermetic TO-258 Package

• Military Screening Available

All Ratings: T

= 25°C unless otherwise specified.

APT5019HLL

UNIT

Volts

Amps

500

±30

±40

210

1.68

-55 to 150

300

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Volts

Watts

W/°C

°C

Amps

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1300

STATIC ELECTRICAL CHARACTERISTICS

Symbol

DSS

D(on)

DS(on)

DSS

GSS

GS(th)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

= 0V, I

= 250µA)

On State Drain Current

MIN

TYP

MAX

UNIT

Volts

Amps

500

0.190

100

500

±100

> I

D(on)

x R

DS(on)

Max, V

= 10V)

Drain-Source On-State Resistance

= 10V, 0.5 I

D[Cont.]

)

Ohms

µA

Volts

050-7319 Rev - 7-2002

Zero Gate Voltage Drain Current (V

= V

DSS

, V

= 0V)

Zero Gate Voltage Drain Current (V

= 0.8 V

DSS

, V

= 0V, T

= 125°C)

Gate-Source Leakage Current (V

= ±30V, V

= 0V)

Gate Threshold Voltage (V

= V

, I

= 1mA)

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

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