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M29W800DB90ZE6T

Description
512K X 16 FLASH 3V PROM, 45 ns, PDSO48
Categorystorage    storage   
File Size951KB,52 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M29W800DB90ZE6T Overview

512K X 16 FLASH 3V PROM, 45 ns, PDSO48

M29W800DB90ZE6T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instruction6 X 8 MM, 0.80 MM PITCH, TFBGA-48
Contacts48
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time90 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B48
length8 mm
memory density8388608 bi
Memory IC TypeFLASH
memory width16
Humidity sensitivity level1
Number of functions1
Number of departments/size1,2,1,15
Number of terminals48
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width6 mm
M29W800DT
M29W800DB
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block)
3 V supply flash memory
Features
Supply voltage
– V
CC
= 2.7 V to 3.6 V for program, erase and
read
Access times: 45, 70, 90 ns
Programming time
– 10 µs per byte/word typical
19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 16 main blocks
Program/erase controller
– Embedded byte/word program algorithms
Erase suspend and resume modes
– Read and program another block during
erase suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Common flash interface
– 64-bit security code
Low power consumption
– Standby and automatic standby
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W800DT: 22D7h
– Bottom device code M29W800DB: 225Bh
TFBGA48 (ZE)
6 x 8 mm
TSOP48 (N)
12 x 20 mm
SO44 (M)
FBGA
March 2008
Rev 10
1/52
www.numonyx.com
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