ZTX655DWP datasheet, PDF - EEWORLD Datasheet

ZTX655DWP: DescriptionSmall Signal Bipolar Transistor, 150V V(BR)CEO, 1-Element, NPN, Silicon, 0.041 X 0.041 INCH, G12, DIE-2; CategoryDiscrete semiconductor The transistor; File Size44KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZTX655DWP Overview

Small Signal Bipolar Transistor, 150V V(BR)CEO, 1-Element, NPN, Silicon, 0.041 X 0.041 INCH, G12, DIE-2

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	UNCASED CHIP, S-XUUC-N2
Reach Compliance Code	unknown
Collector-based maximum capacity	20 pF
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	S-XUUC-N2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
VCEsat-Max	0.5 V
Base Number Matches	1

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