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IRFY440ME

Description
Power Field-Effect Transistor, 5.5A I(D), 500V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
CategoryDiscrete semiconductor    The transistor   
File Size133KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRFY440ME Overview

Power Field-Effect Transistor, 5.5A I(D), 500V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

IRFY440ME Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codecompliant
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)5.5 A
Maximum drain-source on-resistance0.98 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AB
JESD-30 codeS-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment60 W
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)123 ns
Maximum opening time (tons)94 ns
Base Number Matches1
PD - 94193
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number
IRFY440
IRFY440M
IRFY440,IRFY440M
500V, N-CHANNEL
HEXFET
MOSFET TECHNOLOGY
®
R
DS(on)
0.85
0.85
I
D
7.0A
7.0A
Eyelets
Glass
Glass
HEXFET
®
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-257AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Glass Eyelets
For Space Level Applications
Refer to Ceramic Version Part
Numbers IRFY440C, IRFY440CM
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
7.0
4.4
28
100
0.8
±20
510
7.0
10
3.5
-55 to 150
300(0.063in./1.6mm from case for 10 sec)
3.3 (Typical)
W
W/°C
Units
A
V
mJ
A
mJ
V/ns
o
C
g
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1
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