EEWORLDEEWORLDEEWORLD

Part Number

Search

IRF130E

Description
Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size1MB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRF130E Overview

Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

IRF130E Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)75 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)14 A
Maximum drain-source on-resistance0.21 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment75 W
Maximum pulsed drain current (IDM)56 A
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)105 ns
Maximum opening time (tons)115 ns
Base Number Matches1
PD- 90333G
IRF130
JANTX2N6756
JANTXV2N6756
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTORS
THRU-HOLE (TO-204AA)
Product Summary
Part Number
IRF130
100V, N-CHANNEL
REF: MIL-PRF-19500/542
BV
DSS
100V
R
DS(on)
0.18
I
D
14A
TO-3 (TO-204AA)
Description
HEXFET
®
MOSFET technology is the key to IR Hirel advanced
line of power MOSFET transistors. The efficient geometry and
unique processing of this latest “State of the Art” design
achieves: very low on-state resistance combined with high trans
conductance; superior reverse energy and diode recovery dv/dt
capability.
The HEXFET transistors also feature all of the well established
advantages of MOSFETs such as voltage control, very fast
switching and temperature stability of the electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
Features
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 10V, T
C
= 25°C
I
DM
@T
C
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Value
14
9.0
56
75
0.6
± 20
75
14
7.5
5.5
-55 to + 150
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
I
D2
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
For footnotes refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-07-08
2003 Problems with driving LED digital tubes
Use 74HC164 serial to parallel and 2003 driver~ Four 1-bit LED digital tubes, why can't the digital tubes light up?~~ I use other development boards and the digital tubes are bright, but with this boa...
myzanyu Microchip MCU
[Domestic RISC-V Linux Board Fang·Starlight VisionFive Trial Report] Create User Data Insertion
Tornado creates a model for database insertion. Today, we design the sampled data to be inserted. We design the model.py below the models from peewee import * import peewee_asyncdatabase = peewee_asyn...
lugl4313820 Domestic Chip Exchange
Gaofen Help Embedded Development Learning Plan
Hello everyone, I want to learn embedded system development. I am just a junior, and since the school does not have this major, can you please give me some advice on my study plan, that is, what to le...
wqyear Embedded System
The impact of wince software reset on the registry
What effect does executing softwarereset on wince have on the registry? If the registry is modified in the program, will it be restored?...
lengxing Embedded System
LAUNCHXL-F28027 with V2 simulator, really good with circuit diagram
There is only one regret: there is no CLA. All the passengers are satisfied...
dontium Microcontroller MCU
3D TV drama technology is not the problem, the bottleneck lies in popularization
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 19:57[/i] When Sun Wukong was fighting with his golden hoop stick, he felt that it could "poke" his eyes; the fish in the Dragon Palace in...
探路者 Mobile and portable

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1703  2661  1055  98  2131  35  54  22  2  43 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号