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IRFBE22-005

Description
Power Field-Effect Transistor, 1.6A I(D), 800V, 7.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size41KB,1 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

IRFBE22-005 Overview

Power Field-Effect Transistor, 1.6A I(D), 800V, 7.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

IRFBE22-005 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage800 V
Maximum drain current (ID)1.6 A
Maximum drain-source on-resistance7.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)6.4 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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