M392T5160QJA-CE6 datasheet, PDF

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M392T5160QJA-CE6: DescriptionDDR DRAM Module, 512MX72, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240; Categorystorage storage; File Size615KB，29 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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M392T5160QJA-CE6 Overview

DDR DRAM Module, 512MX72, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240

M392T5160QJA-CE6 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	DIMM
package instruction	DIMM, DIMM240,40
Contacts	240
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	333 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N240
memory density	38654705664 bit
Memory IC Type	DDR DRAM MODULE
memory width	72
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	240
word count	536870912 words
character code	512000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	512MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM240,40
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.54 A
Maximum slew rate	6.13 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	NO
technology	CMOS
Temperature level	OTHER
Terminal form	NO LEAD
Terminal pitch	1 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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VLP RDIMM

DDR2 SDRAM

DDR2 VLP Registered SDRAM MODULE

240pin VLP Registered Module based on 1Gb Q-die

72-bit ECC

60FBGA / 63FBGA / 65FBGA with Lead-Free and Halogen-Free

(RoHS compliant)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-

WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-

OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT

GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

1 of 29

Rev. 1.1 July 2008

VLP RDIMM

Table of Contents

DDR2 SDRAM

1.0 DDR2 Registered DIMM Ordering Information ......................................................................................... 4

2.0 Features ....................................................................................................................................................... 4

3.0 Address Configuration ............................................................................................................................... 4

4.0 Pin Configurations (Front side/Back side) ............................................................................................... 5

5.0Pin Description ............................................................................................................................................. 5

6.0 Input/Output Function Description ............................................................................................................ 6

7.0 Functional Block Diagram .......................................................................................................................... 7

7.1 1GB, 128Mx72 Module - M392T2863QZA

........................................................................................................... 7

7.2 2GB, 256Mx72 Module - M392T5663QZA

........................................................................................................... 8

7.3 2GB, 256Mx72 Module - M392T5660QZA

........................................................................................................... 9

7.4 4GB, DDP 512Mx72 Module - M392T5160QJA

.................................................................................................. 10

7.5 8GB, QDP 1Gx72 Module - M392T1G60QQA

.................................................................................................... 11

8.0 Absolute Maximum DC Ratings ............................................................................................................... 12

9.0 AC & DC Operating Conditions ............................................................................................................... 12

9.1 Recommended DC Operating Conditions (SSTL - 1.8)

...................................................................................... 12

9.2 Operating Temperature Condition

................................................................................................................. 13

9.3 Input DC Logic Level

................................................................................................................................... 13

9.4 Input AC Logic Level

................................................................................................................................... 13

9.5 AC Input Test Conditions

............................................................................................................................. 13

10.0 IDD Specification Parameters Definition .............................................................................................. 14

11.0 Operating Current Table ......................................................................................................................... 15

11.1 M392T2863QZA : 1GB(128Mx8 *9) Module

.................................................................................................. 15

11.2 M392T2863QZA : 1GB(128Mx8 *9) Module - considering Register and PLL current value

.................................. 15

11.3 M392T5663QZA : 2GB(128Mx8 *18) Module

................................................................................................ 16

11.4 M392T5663QZA : 2GB(128Mx8 *18) Module - considering Register and PLL current value

............................... 16

11.5 M392T5660QZA : 2GB(256Mx4 *18) Module

............................................................................................... 17

11.6 M392T5660QZA : 2GB(256Mx4 *18) Module - considering Register and PLL current value

................................ 17

11.7 M392T5160QJA : 4GB(DDP 512Mx4 *18) Module

......................................................................................... 18

11.8 M392T5160QJA : 4GB(DDP 512Mx4 *18) Module - considering Register and PLL current value

........................ 18

11.9 M392T1G60QQA : 8GB(QDP 1Gx4 *18) Module

........................................................................................... 19

11.10 M392T1G60QQA : 8GB(QDP 1Gx4 *18) Module - considering Register and PLL current value

......................... 19

12.0 Input/Output Capacitance ...................................................................................................................... 20

13.0 Electrical Characteristics & AC Timing for DDR2-800/667/533 ........................................................... 20

13.1 Refresh Parameters by Device Density

...................................................................................................... 20

13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin

............................................................. 20

13.3 Timing parameters by speed grade (DDR2-800 and DDR2-667)

....................................................................... 21

13.4 Timing parameters by speed grade (DDR2-533)

........................................................................................... 23

14.0 Physical Dimensions : ............................................................................................................................ 25

14.1 128Mbx8 based 128Mx72 Module (1 Rank)

.................................................................................................. 25

14.2 128Mbx8/256Mbx4 based 256Mx72 Module (2/1 Ranks)

................................................................................. 26

14.3 DDP 512Mbx4 based 512Mx72 Module (2 Ranks)

......................................................................................... 27

14.4 QDP 1G x4 based 1Gx72 Module (4 Ranks)

................................................................................................. 28

15.0 240 Pin DDR2 Registered DIMM Clock Topology ................................................................................. 29

2 of 29

Rev. 1.1 July 2008

M392T5160QJA-CE6 Related Products

	M392T5160QJA-CE6	M392T2863QZA-CF7	M392T5160QJA-CF7	M392T5660QZA-CF7	M392T5663QZA-CF7	M392T5663QZA-CE6	M392T2863QZA-CE6	M392T5660QZA-CE6	M392T1G60QQA-CD5
Description	DDR DRAM Module, 512MX72, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM Module, 128MX72, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM Module, 512MX72, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM Module, 256MX72, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM Module, 256MX72, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM Module, 256MX72, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM Module, 128MX72, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM Module, 256MX72, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM Module, 1GX72, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40
Contacts	240	240	240	240	240	240	240	240	240
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.5 ns	0.4 ns	0.4 ns	0.4 ns	0.4 ns	0.5 ns	0.5 ns	0.5 ns	0.45 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	333 MHz	400 MHz	400 MHz	400 MHz	400 MHz	333 MHz	333 MHz	333 MHz	267 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N240	R-XDMA-N240	R-XDMA-N240	R-XDMA-N240	R-XDMA-N240	R-XDMA-N240	R-XDMA-N240	R-XDMA-N240	R-XDMA-N240
memory density	38654705664 bit	9663676416 bit	38654705664 bit	19327352832 bit	19327352832 bit	19327352832 bit	9663676416 bit	19327352832 bit	77309411328 bi
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	72	72	72	72	72	72	72	72	72
Humidity sensitivity level	3	3	3	3	3	3	3	3	3
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	240	240	240	240	240	240	240	240	240
word count	536870912 words	134217728 words	536870912 words	268435456 words	268435456 words	268435456 words	134217728 words	268435456 words	1073741824 words
character code	512000000	128000000	512000000	256000000	256000000	256000000	128000000	256000000	1000000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
organize	512MX72	128MX72	512MX72	256MX72	256MX72	256MX72	128MX72	256MX72	1GX72
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260	260
power supply	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192	8192
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum slew rate	6.13 mA	2.94 mA	6.75 mA	5.44 mA	3.6 mA	3.26 mA	2.65 mA	4.92 mA	7.13 mA
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum standby current	0.54 A	0.135 A	0.54 A	0.27 A	-	-	0.135 A	0.27 A	1.08 A
Maker	-	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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