71V3579YS75BGG8 datasheet, PDF

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71V3579YS75BGG8: DescriptionStandard SRAM, 256KX18, 7.5ns, CMOS, PBGA119; Categorystorage storage; File Size237KB，22 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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71V3579YS75BGG8 Overview

Standard SRAM, 256KX18, 7.5ns, CMOS, PBGA119

71V3579YS75BGG8 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Reach Compliance Code	compliant
Maximum access time	7.5 ns
Maximum clock frequency (fCLK)	117 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B119
JESD-609 code	e1
memory density	4718592 bit
Memory IC Type	STANDARD SRAM
memory width	18
Humidity sensitivity level	3
Number of terminals	119
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA119,7X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.03 A
Minimum standby current	3.14 V
Maximum slew rate	0.255 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
Base Number Matches	1

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128K X 36, 256K X 18

3.3V Synchronous SRAMs

3.3V I/O, Flow-Through Outputs

Burst Counter, Single Cycle Deselect

Features

◆

IDT71V3577YS

IDT71V3579YS

IDT71V3577YSA

IDT71V3579YSA

Description

The IDT71V3577/79 are high-speed SRAMs organized as

128K x 36/256K x 18. The IDT71V3577/79 SRAMs contain write, data,

address and control registers. There are no registers in the data output

path (flow-through architecture). Internal logic allows the SRAM to gen-

erate a self-timed write based upon a decision which can be left until the

end of the write cycle.

The burst mode feature offers the highest level of performance to the

system designer, as the IDT71V3577/79 can provide four cycles of data

for a single address presented to the SRAM. An internal burst address

counter accepts the first cycle address from the processor, initiating the

access sequence. The first cycle of output data will flow-through from the

array after a clock-to-data access time delay from the rising clock edge of

the same cycle. If burst mode operation is selected (ADV=LOW), the

subsequent three cycles of output data will be available to the user on the

next three rising clock edges. The order of these three addresses are

defined by the internal burst counter and the

LBO

input pin.

The IDT71V3577/79 SRAMs utilize IDT’s latest high-performance

CMOS process and are packaged in a JEDEC standard 14mm x 20mm

100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array

(BGA) and a 165 fine pitch ball grid array (fBGA).

Input

Output

Input

I/O

Supply

Synchronous

Asynchronous

Synchronous

N/A

Synchronous

N/A

Synchronous

Asynchronous

Synchronous

N/A

◆

128K x 36, 256K x 18 memory configurations

Supports fast access times:

Commercial:

– 6.5ns up to 133MHz clock frequency

– 7.5ns up to 117MHz clock frequency

Commercial and Industrial:

– 8.0ns up to 100MHz clock frequency

– 8.5ns up to 87MHz clock frequency

LBO

input selects interleaved or linear burst mode

Self-timed write cycle with global write control (GW), byte write

enable (BWE), and byte writes (BWx)

3.3V core power supply

Power down controlled by ZZ input

3.3V I/O

Optional - Boundary Scan JTAG Interface (IEEE 1149.1

compliant)

Packaged in a JEDEC Standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball

grid array

Pin Description Summary

-A

BWE

(1)

CLK

ADV

ADSC

ADSP

LBO

TMS

TDI

TCK

TDO

TRST

I/O

-I/O

, I/O

-I/O

, V

DDQ

Address Inputs

Chip Enable

Chip Selects

Output Enable

Global Write Enable

Byte Write Enable

Individual Byte Write Selects

Clock

Burst Address Advance

Address Status (Cache Controller)

Address Status (Processor)

Linear / Interleaved Burst Order

Test Mode Select

Test Data Input

Test Clock

Test Data Output

JTAG Reset (Optional)

Sleep Mode

Data Input / Output

Core Power, I/O Power

Ground

NOTE:

and

are not applicable for the IDT71V3579.

APRIL 2006

DSC-6450/0A

6450tbl 01

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