EEWORLDEEWORLDEEWORLD

Part Number

Search

IRFZ48Z

Description
AUTOMOTIVE MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size279KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRFZ48Z Overview

AUTOMOTIVE MOSFET

IRFZ48Z Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220AB
package instructionTO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)73 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)61 A
Maximum drain current (ID)61 A
Maximum drain-source on-resistance0.011 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)91 W
Maximum pulsed drain current (IDM)240 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 94763
AUTOMOTIVE MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
HEXFET
®
Power MOSFET
D
IRFZ48Z
IRFZ48ZS
IRFZ48ZL
V
DSS
= 55V
Description
Specifically designed for Automotive applica-
tions, this HEXFET
®
Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
G
S
R
DS(on)
= 11mΩ
I
D
= 61A
TO-220AB
IRFZ48Z
D
2
Pak
IRFZ48ZS
Max.
61
43
240
91
0.61
± 20
73
120
See Fig.12a,12b,15,16
-55 to + 175
TO-262
IRFZ48ZL
Units
A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Pulsed Drain Current
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
W
W/°C
V
mJ
A
mJ
°C
c
i
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
h
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
1.64
–––
62
40
Units
°C/W
j
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
08/27/03

IRFZ48Z Related Products

IRFZ48Z IRFZ48ZL IRFZ48ZS
Description AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET
Is it Rohs certified? incompatible incompatible incompatible
package instruction TO-220AB, 3 PIN IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Is Samacsys N N N
Avalanche Energy Efficiency Rating (Eas) 73 mJ 73 mJ 73 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V
Maximum drain current (Abs) (ID) 61 A 61 A 61 A
Maximum drain current (ID) 61 A 61 A 61 A
Maximum drain-source on-resistance 0.011 Ω 0.011 Ω 0.011 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSIP-T3 R-PSSO-G2
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 225 225 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 91 W 91 W 91 W
Maximum pulsed drain current (IDM) 240 A 240 A 240 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
Parts packaging code TO-220AB TO-262AA -
JEDEC-95 code TO-220AB TO-262AA -
Other features - AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
LM3S9B96 MAC address programming error?
What is the reason?...
喜鹊王子 TI Technology Forum
Moderators who blocked the advertising party’s ID, please leave one for me!
Recently, a lot of advertising parties have emerged in the forum. When people see them, they are very...excited, but I heard that only super moderators can delete posts and ban accounts across forums....
辛昕 Talking
Such a line
Looking at someone else's PCB board, I saw this kind of routing, as shown in Figure 1. It feels very strange...
qiwan PCB Design
Protel Tutorial - Exercises and Examples
Protel Tutorial - Exercises and Examples...
fzm_arm PCB Design
Polarity of Amplifier Input Bias and Offset Currents
Input bias current Ib=((I+)+(I-))/2, offset current Ios=|(I+)-(I-)|. How to determine the current polarity of the in-phase input and the inverting input? Is it an algebraic sum or a vector sum? For ex...
世界的城 Analog electronics
A strange question
I downloaded a compressed file from the Internet to the D drive, unzipped it, and saved it to the F drive, but I couldn't see the saved file in the F drive. The folder options were set to show all fil...
songguoda Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1119  1535  2888  1251  143  23  31  59  26  3 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号