DATA SHEET
COMPOUND TRANSISTOR
AB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• Current drive available up to 0.7 A
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
AB1 SERIES LISTS
Products
AB1A4A
AB1L2Q
AB1A3M
AB1F3P
AB1J3P
AB1L3N
AB1A4M
R
1
(KΩ)
−
0.47
1.0
2.2
3.3
4.7
10
R
2
(KΩ)
10
4.7
1.0
10
10
10
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
T
j
T
stg
Ratings
30
25
10
0.7
1.0
0.02
750
150
−55
to +150
Unit
V
V
V
A
A
A
mW
°C
°C
* PW
≤
10 ms, duty cycle
≤
50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10836EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
AB1 SERIES
AB1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
CE(sat)
**
V
IL
**
R
1
R
2
Conditions
V
CB
= 30 V, I
E
= 0
V
CE
= 2.0 V, I
C
= 0.1 A
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 0.7 A
I
C
= 5.0 A, I
C
= 5 mA
V
CE
= 5.0 V, I
C
= 100
µ
A
−
7
−
10
300
300
135
0.27
0.4
0.3
−
13
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
V
V
Ω
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
AB1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
Conditions
V
CB
= 30 V, I
E
= 0
V
CE
= 2.0 V, I
C
= 0.1 A
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 0.7 A
V
IN
= 5.0 V, I
C
= 0.5 A
V
CE
= 5.0 V, I
C
= 100
µ
A
329
3.29
470
4.7
150
300
135
400
700
600
0.2
0.3
0.3
611
6.11
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
V
V
Ω
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
AB1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
Conditions
V
CB
= 30 V, I
E
= 0
V
CE
= 2.0 V, I
C
= 0.1 A
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 0.7 A
V
IN
= 5.0 V, I
C
= 0.5 A
V
CE
= 5.0 V, I
C
= 100
µ
A
0.7
0.7
1.0
1.0
80
100
135
0.3
0.4
0.3
1.3
1.3
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
V
V
kΩ
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
2
Data Sheet D10836EJ2V0DS
AB1 SERIES
AB1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
Conditions
V
CB
= 30 V, I
E
= 0
V
CE
= 2.0 V, I
C
= 0.1 A
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 0.7 A
V
IN
= 5.0 V, I
C
= 0.3 A
V
CE
= 5.0 V, I
C
= 100
µ
A
1.54
7
2.2
10
300
300
135
0.3
0.3
2.86
13
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
V
V
kΩ
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
AB1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
Conditions
V
CB
= 30 V, I
E
= 0
V
CE
= 2.0 V, I
C
= 0.1 A
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 0.7 A
V
IN
= 5.0 V, I
C
= 0.2 A
V
CE
= 5.0 V, I
C
= 100
µ
A
2.31
7
3.3
10
300
300
135
600
700
600
0.14
0.3
0.3
4.29
13
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
V
V
kΩ
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
AB1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
Conditions
V
CB
= 30 V, I
E
= 0
V
CE
= 2.0 V, I
C
= 0.1 A
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 0.7 A
V
IN
= 5.0 V, I
C
= 0.2 A
V
CE
= 5.0 V, I
C
= 100
µ
A
3.29
7
4.7
10
300
300
135
0.3
0.3
6.11
13
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
V
V
kΩ
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
Data Sheet D10836EJ2V0DS
3
Embedded System
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