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M58BW016DB7ZA3FT

Description
512K X 32 FLASH 3V PROM, 70 ns, PQFP80
Categorystorage    storage   
File Size1MB,70 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M58BW016DB7ZA3FT Overview

512K X 32 FLASH 3V PROM, 70 ns, PQFP80

M58BW016DB7ZA3FT Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instruction10 X 12 MM, 1 MM PITCH, LBGA-80
Contacts80
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time70 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B80
length12 mm
memory density16777216 bi
Memory IC TypeFLASH
memory width32
Humidity sensitivity level1
Number of functions1
Number of departments/size8,31
Number of terminals80
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA80,8X10,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply2.5/3.3,3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Department size2K,16K
Maximum standby current0.000005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width10 mm
M58BW016DB M58BW016DT
M58BW016FT M58BW016FB
16 Mbit (512 Kbit x 32, boot block, burst)
3 V supply Flash memories
Features
Supply voltage
– V
DD
= 2.7 V to 3.6 V for program, erase
and read
– V
DDQ
= V
DDQIN
= 2.4 V to 3.6 V for I/O
buffers
– V
PP
= 12 V for fast program (optional)
High performance
– Access times: 70, 80 ns
– 56 MHz effective zero wait-state burst read
– Synchronous burst read
– Asynchronous page read
Hardware block protection
– WP pin for write protect of the 4 outermost
parameter blocks and all main blocks
– RP pin for write protect of all blocks
Optimized for FDI drivers
– Fast program / erase suspend latency
time < 6 µs
– Common Flash interface
Memory blocks
– 8 parameters blocks (top or bottom)
– 31 main blocks
Low power consumption
– 5 µA typical deep power-down
– 60 µA typical standby for M58BW016DT/B
150 µA typical standby for M58BW016FT/B
– Automatic standby after asynchronous read
Electronic signature
– Manufacturer code: 20h
– Top device code: 8836h
– Bottom device code: 8835h
100 K write/erase cycling + 20 years data
retention (minimum)
High reliability level with over 1 M write/erase
cycling sustained
ECOPACK
®
packages available
PQFP80 (T)
LBGA
LBGA80 10 × 12 mm
March 2008
Rev 17
1/70
www.numonyx.com
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