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M58WR016QB80ZB6E

Description
16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories
Categorystorage    storage   
File Size2MB,110 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

M58WR016QB80ZB6E Overview

16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories

M58WR016QB80ZB6E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeBGA
package instruction7.7 X 9 MM, 0.75 MM PITCH, ROHS COMPLIANT, VFBGA-56
Contacts56
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time80 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B56
JESD-609 codee1
length9 mm
memory density16777216 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,31
Number of terminals56
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA56,7X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8,1.8/2 V
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Department size4K,32K
Maximum standby current0.00005 A
Maximum slew rate0.045 mA
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width7.7 mm
Base Number Matches1
M58WR016QT M58WR016QB
M58WR032QT M58WR032QB
16 Mbit and 32 Mbit (x16, Multiple Bank, Burst)
1.8V supply Flash memories
Feature summary
Supply voltage
– V
DD
= 1.7V to 2V for Program, Erase and
Read
– V
DDQ
= 1.7V to 2.24V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66MHz
– Asynchronous/ Synchronous Page Read
mode
– Random access: 60ns, 70ns, 80ns
Synchronous Burst Read Suspend
Programming time
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter blocks (top or bottom location)
Dual operations
– Program Erase in one bank while Read in
others
– No delay between Read and Write
operations
Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
Common Flash Interface (CFI)
100,000 program/erase cycles per block
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
Electronic signature
– Manufacturer Code: 20h
– Device Codes:
M58WR016QT (Top): 8812h.
M58WR016QB (Bottom): 8813h
M58WR032QT (Top): 8814h
M58WR032QB (Bottom): 8815h
ECOPACK® package available
November 2007
Rev 2
1/110
www.numonyx.com
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