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BYQ28-100

Description
5 A, 100 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size37KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BYQ28-100 Overview

5 A, 100 V, SILICON, RECTIFIER DIODE

BYQ28-100 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JESD-609 codee0
Maximum non-repetitive peak forward current60 A
Maximum operating temperature150 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.02 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated dual epitaxial
rectifier diodes in a full pack plastic
envelope, featuring low forward
voltage drop, ultra-fast recovery
times
and
soft
recovery
characteristic. They are intended for
use in switched mode power supplies
and high frequency circuits in general
where low conduction and switching
losses are essential.
BYQ28X series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
t
rr
PARAMETER
BYQ28X-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
MAX.
100
100
0.895
10
25
MAX.
150
150
0.895
10
25
MAX.
200
200
0.895
10
25
UNIT
V
V
A
ns
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1
1
k2
1 2 3
a2
3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
1
Output current (both diodes
conducting)
2
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
I
2
t for fusing
Storage temperature
Operating junction temperature
square wave
δ
= 0.5; T
hs
92 ˚C
sinusoidal
a = 1.57; T
hs
95 ˚C
t = 25
µs; δ
= 0.5;
T
hs
92 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
t = 10 ms
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
10
9
14
10
50
55
12.5
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
˚C
˚C
I
O(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
1
T
hs
148˚C for thermal stability.
2
Neglecting switching and reverse current losses
August 1996
1
Rev 1.000

BYQ28-100 Related Products

BYQ28-100 BYQ28-200 BYQ28X
Description 5 A, 100 V, SILICON, RECTIFIER DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible -
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) -
Reach Compliance Code unknow unknow -
Diode type RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 0.85 V 0.85 V -
JESD-609 code e0 e0 -
Maximum non-repetitive peak forward current 60 A 60 A -
Maximum operating temperature 150 °C 150 °C -
Maximum output current 10 A 10 A -
Maximum repetitive peak reverse voltage 100 V 200 V -
Maximum reverse recovery time 0.02 µs 0.02 µs -
surface mount NO NO -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
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