Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated dual epitaxial
rectifier diodes in a full pack plastic
envelope, featuring low forward
voltage drop, ultra-fast recovery
times
and
soft
recovery
characteristic. They are intended for
use in switched mode power supplies
and high frequency circuits in general
where low conduction and switching
losses are essential.
BYQ28X series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
t
rr
PARAMETER
BYQ28X-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
MAX.
100
100
0.895
10
25
MAX.
150
150
0.895
10
25
MAX.
200
200
0.895
10
25
UNIT
V
V
A
ns
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1
1
k2
1 2 3
a2
3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
1
Output current (both diodes
conducting)
2
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
I
2
t for fusing
Storage temperature
Operating junction temperature
square wave
δ
= 0.5; T
hs
≤
92 ˚C
sinusoidal
a = 1.57; T
hs
≤
95 ˚C
t = 25
µs; δ
= 0.5;
T
hs
≤
92 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
t = 10 ms
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
10
9
14
10
50
55
12.5
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
˚C
˚C
I
O(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
1
T
hs
≤
148˚C for thermal stability.
2
Neglecting switching and reverse current losses
August 1996
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
BYQ28X series
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.7
6.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage (per diode)
Reverse current (per diode)
CONDITIONS
I
F
= 5 A; T
j
= 150˚C
I
F
= 5 A
I
F
= 10 A
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
MIN.
-
-
-
-
-
TYP.
0.80
0.95
1.10
0.1
2
MAX.
0.895
1.10
1.25
0.2
10
UNIT
V
V
V
mA
µA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
Q
s
t
rr1
t
rr2
V
fr
PARAMETER
Reverse recovery charge (per
diode)
Reverse recovery time (per
diode)
Reverse recovery time (per
diode)
Forward recovery voltage (per
diode)
CONDITIONS
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
TYP.
4
15
10
1
MAX.
9
25
20
-
UNIT
nC
ns
ns
V
August 1996
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
I
dI
F
dt
F
0.5A
IF
t
rr
time
0A
I rec = 0.25A
IR
trr2
Q
I
R
I
s
10%
100%
rrm
I = 1A
R
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Definition of t
rr2
I
F
8
7
6
5
PF / W
Vo = 0.748 V
Rs = 0.0293 Ohms
BYQ28
Ths(max) / C
D = 1.0
104.4
110.1
115.8
0.5
0.2
0.1
121.5
127.2
132.9
time
VF
V
VF
time
fr
4
3
2
1
I
t
p
t
p
D=
T
t
138.6
144.3
150
8
T
0
0
1
2
3
4
IF(AV) / A
5
6
7
Fig.2. Definition of V
fr
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.748 V
Rs = 0.0293 Ohms
R
6
5
BYQ28
Ths(max) / C
115.8
121.5
127.2
132.9
138.6
144.3
150
6
a = 1.57
1.9
2.2
2.8
4
D.U.T.
Voltage Pulse Source
4
3
2
Current
shunt
to ’scope
1
0
0
1
2
3
IF(AV) / A
4
5
Fig.3. Circuit schematic for t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
August 1996
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
1000
trr / ns
100
Qs / nC
IF=5A
IF=2A
IF=1A
100
IF=5A
10
IF=1A
10
1.0
1
1
10
dIF/dt (A/us)
100
0.1
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum t
rr
at T
j
= 25 ˚C; per diode
Fig.10. Maximum Q
s
at T
j
= 25 ˚C; per diode
10
Irrm / A
10
Zth j-hs (K/W)
without heatsink compound
with heatsink compound
1
IF=5A
1
0.1
IF=1A
0.1
P
D
tp
t
0.01
1
10
-dIF/dt (A/us)
100
0.01
10us
1ms
tp / s
0.1s
10s
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
15
IF / A
Tj=150C
Tj=25C
BYQ28
10
5
typ
max
0
0
0.5
VF / V
1
1.5
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
August 1996
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
BYQ28X series
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
3
1.0 (2x)
0.6
2.54
0.5
2.5
1.3
0.9
0.7
5.08
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1996
5
Rev 1.000
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