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BTA208B800C

Description
TRIAC, 800V V(DRM), 8A I(T)RMS
CategoryAnalog mixed-signal IC    Trigger device   
File Size155KB,3 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BTA208B800C Overview

TRIAC, 800V V(DRM), 8A I(T)RMS

BTA208B800C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current35 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current15 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.65 V
Maximum operating temperature125 °C
Maximum rms on-state current8 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC

BTA208B800C Related Products

BTA208B800C BTA208B500C BTA208B600C
Description TRIAC, 800V V(DRM), 8A I(T)RMS TRIAC, 500V V(DRM), 8A I(T)RMS TRIAC, 600V V(DRM), 8A I(T)RMS
Is it Rohs certified? incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown unknown
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us 1000 V/us
Maximum DC gate trigger current 35 mA 35 mA 35 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V
Maximum holding current 15 mA 15 mA 15 mA
JESD-609 code e0 e0 e0
Maximum leakage current 0.5 mA 0.5 mA 0.5 mA
Maximum on-state voltage 1.65 V 1.65 V 1.65 V
Maximum operating temperature 125 °C 125 °C 125 °C
Maximum rms on-state current 8 A 8 A 8 A
Off-state repetitive peak voltage 800 V 500 V 600 V
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Trigger device type TRIAC TRIAC TRIAC
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