An
IXYS
Company
Provisional Data
Development Type No.: AX143LC330
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
MAXIMUM
LIMITS
3300
30
3300
30
Asymmetric Thyristor
Types A1080LC280 to A1080LC330
Repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
Page 1 of 10
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM2
It
2
Maximum average on-state current, T
sink
=55°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
2
(di/dt)
cr
V
RGM
P
GM
T
j op
T
stg
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
P
G(AV)
Operating temperature range
Storage temperature range
Data Sheet. Types A1080LC280- to A1080LC330 Issue 1
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Critical rate of rise of on-state current (repetitive), (Note 6)
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
FG
=2A, t
r
≤0.5µs,
T
case
=125°C.
UNITS
V
V
V
V
WESTCODE
Date:- 16 June, 2005
Data Sheet Issue:- 1
MAXIMUM
LIMITS
1080
732
435
2148
1276
12.5
781×10
2000
1000
10
10
30
-40 to +125
-40 to +150
3
UNITS
A
A
A
A
A
kA
As
A/µs
A/µs
V
W
W
°C
°C
2
June, 2005
WESTCODE
An IXYS Company
Characteristics
PARAMETER
V
TM
V
T0
r
T
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
t
q
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Gate-controlled turn-on delay time
Turn-on time
Turn-off time
Asymmetric Thyristor Types A1080LC280 to A1080LC330
-
-
-
-
3000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.4
2.2
1.038
0.369
-
60
I
TM
=1000A
I
TM
=3240A
V
D
=10V, I
T
=3A
June, 2005
MIN.
TYP.
MAX. TEST CONDITIONS
(Note 1)
UNITS
V
V
V
mΩ
V/µs
mA
mA
V
mA
V
mA
µs
µs
µs
K/W
K/W
kN
g
R
thJK
F
W
t
Thermal resistance, junction to heatsink
Mounting force
Weight
Notes:-
1)
Unless otherwise indicated T
j
=125
°
C.
2)
For all other mounting forces, please consult factory.
Data Sheet. Types A1080LC280- to A1080LC330 Issue 1
Page 2 of 10
550
-
-
-
0.032
-
-
0.064
20
-
10
-
-
340
Rated V
DRM
Rated V
RRM
-
-
60
-
3.0
300
T
j
=25°C
-
0.25
Rated V
DRM
-
1000
1.0
T
j
=25°C
0.4
0.7
1.5
-
330
Double side cooled
Single side cooled
(See note 2)
(dv/dt)
cr
Critical rate of rise of off-state voltage
V
D
=80% V
DRM
, linear ramp, gate o/c
V
D
=90% V
DRM
, I
T
=6000A, di/dt=1500A/µs,
I
FG
=2A, t
r
=0.5µs, T
j
=25°C
I
TM
=1000A, t
p
=2000µs, di/dt=60A/µs,
V
r
=10V, V
dr
=80%V
DRM
, dV
dr
/dt=20V/µs
I
TM
=1000A, t
p
=2000µs, di/dt=60A/µs,
V
r
=10V, V
dr
=80%V
DRM
, dV
dr
/dt=200V/µs
WESTCODE
An IXYS Company
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
28
30
32
33
2.0 Extension of Voltage Grades
V
DRM
V
DSM
V
2800
3000
3200
3300
Asymmetric Thyristor Types A1080LC280 to A1080LC330
V
RRM
30
30
30
30
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 2000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
I
GM
4A/µs
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
t
p1
Page 3 of 10
The magnitude of I
GM
should be between five and ten times I
GT
, which is shown on page 3. Its duration
(t
p1
) should be 20µs or sufficient to allow the anode current to reach ten times I
L
, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
G
should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times I
GT
.
8.0 Computer Modelling Parameters
Data Sheet. Types A1080LC280- to A1080LC330 Issue 1
I
G
V
D
DC V
1650
1750
1800
1825
June, 2005
WESTCODE
An IXYS Company
8.1 Device Dissipation Calculations
Asymmetric Thyristor Types A1080LC280 to A1080LC330
and:
∆
T
=
T
j
max
−
T
K
Where V
T0
=
1.038
, r
T
=0.369mΩ,
Supplementary Thermal Impedance
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
30°
0.048
0.079
0.0415
0.0735
60°
90°
0.0436
0.0413
0.074
0.07
120°
180°
0.0388
0.036
0.0769
0.0716
0.0688
0.032
0.064
0.0394
0.0378
0.0355
0.0718
0.0679
Form Factors
2
60°
90°
120°
1.73
1.88
180°
1.41
1.57
2.45
2.78
2.22
125°C Coefficients
A
B
C
D
0.035552
0.206122
4.37×10
-4
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
3.46
3.98
25°C Coefficients
1.63008
A
B
-0.109143
2.16×10
-4
Conduction Angle
Square wave
Sine wave
30°
8.2 Calculating V
T
using ABCD Coefficients
The on-state characteristic I
T
vs. V
T
, on page 6 is represented in two ways;
(i)
the well established V
T0
and r
T
tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for V
T
in
terms of I
T
given below:
V
T
=
A
+
B
⋅
ln
(
I
T
)
+
C
⋅
I
T
+
D
⋅
I
T
C
D
0.010709
Data Sheet. Types A1080LC280- to A1080LC330 Issue 1
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
T
agree with the true device characteristic over a current range, which is limited to
that plotted.
-0.015558
Page 4 of 10
270°
d.c.
0.032
0.064
0.0345
0.0665
270°
1.15
d.c.
1
June, 2005
I
AV
−
V
T
0
+
V
T
0
+
4
⋅
ff
⋅
r
T
⋅
W
AV
=
2
⋅
ff
2
⋅
r
T
2
2
W
AV
∆
T
=
R
th
WESTCODE
An IXYS Company
8.3 D.C. Thermal Impedance Calculation
Asymmetric Thyristor Types A1080LC280 to A1080LC330
The coefficients for this device are shown in the tables below:
D.C. Double Side Cooled
Term
1
0.01771901
0.7085781
2
3
4
-3
Where
p = 1
to
n, n
is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r
t
= Thermal resistance at time t.
r
p
= Amplitude of p
th
term.
τ
p
= Time Constant of r
th
term.
r
p
4.240625×10
0.1435833
6.963806×10
0.03615196
τ
p
1
2
3
0.01022837
1.078983
8.789912×10
0.08530917
-3
Page 5 of 10
D.C. Single Side Cooled
Term
r
p
0.03947164
4.090062
τ
p
Data Sheet. Types A1080LC280- to A1080LC330 Issue 1
June, 2005
-3
−
t
τ
r
t
=
∑
r
p
⋅
1
−
e
p
p
=
1
p
=
n
3.043661×10
-3
-3
2.130842×10
4
-3
5
1.907609×10
1.240861×10
-3
-3
4.235162×10
0.01128791
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