ZTX755STZ datasheet, PDF - EEWORLD Datasheet

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ZTX755STZ: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size71KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZTX755STZ Overview

Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX755STZ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	20 pF
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
VCEsat-Max	0.5 V
Base Number Matches	1

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PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 2 JULY 94

FEATURES

* 150 Volt V

CEO

* 1 Amp continuous current

* Low saturation voltage

* P

tot

= 1 Watt

ZTX754

ZTX755

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX754

-125

-5

-2

-1

1

E-Line

TO92 Compatible

ZTX755

-150

UNIT

V

A

W

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

50

20

30

20

3-263

ZTX754

MIN.

-125

-5

-100

-0.5

-1.1

-1.0

50

20

30

20

MHz

pF

MAX.

ZTX755

MIN.

-150

-5

-100

-0.5

-1.1

-1.0

MAX.

V

nA

V

I

C

=-100

µ

A, I

E

=0

I

C

=-10mA, I

B

=0*

I

E

=-100

µ

A, I

C

=0

V

CB

=-100V, I

E

=0

V

CB

=-125V, I

E

=0

V

EB

=-3V, I

C

=0

I

C

=-500mA, I

B

=-50mA*

I

C

=-1A, I

B

=-200mA*

I

C

=-500mA, I

B

=-50mA*

IC=-500mA, V

CE

=-5V*

I

C

=-10mA, V

CE

=-5V

I

C

=-500mA, V

CE

=-5V*

I

C

=-1A, V

CE

=-5V*

I

C

=-10mA, V

CE

=-20V

f=20MHz

V

CB

=-20V, f=1MHz

UNIT

CONDITIONS.

Static Forward

h

FE

Current Transfer Ratio

Transition Frequency

Output Capacitance

f

T

C

obo

ZTX755STZ Related Products

	ZTX755STZ	ZTX755STOB
Description	Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Reach Compliance Code	not_compliant	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-based maximum capacity	20 pF	20 pF
Collector-emitter maximum voltage	150 V	150 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20
JESD-30 code	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	MATTE TIN
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz
VCEsat-Max	0.5 V	0.5 V
Base Number Matches	1	1

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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