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M93C66-BN3P

Description
64 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8
Categorystorage    storage   
File Size306KB,34 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

M93C66-BN3P Overview

64 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8

M93C66-BN3P Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeDIP
package instructionPLASTIC, LEAD FREE, DIP-8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Spare memory width8
Maximum clock frequency (fCLK)2 MHz
Data retention time - minimum40
Durability1000000 Write/Erase Cycles
JESD-30 codeR-PDIP-T8
JESD-609 codee3
length9.27 mm
memory density4096 bi
Memory IC TypeEEPROM
memory width16
Number of functions1
Number of terminals8
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize256X16
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Maximum seat height5.33 mm
Serial bus typeMICROWIRE
Maximum standby current0.00005 A
Maximum slew rate0.0015 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
Maximum write cycle time (tWC)10 ms
write protectSOFTWARE
M93C86, M93C76, M93C66
M93C56, M93C46
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide)
MICROWIRE® serial access EEPROM
Features
Industry standard MICROWIRE bus
Single supply voltage:
– 4.5 V to 5.5 V for M93Cx6
– 2.5 V to 5.5 V for M93Cx6-W
– 1.8 V to 5.5 V for M93Cx6-R
Dual organization: by word (x16) or byte (x8)
Programming instructions that work on: byte,
word or entire memory
Self-timed programming cycle with auto-erase:
5 ms
READY/BUSY signal during programming
2 MHz clock rate
Sequential read operation
Enhanced ESD/latch-up behavior
More than 1 million write cycles
More than 40 year data retention
Packages
– SO8, TSSOP8, UFDFPN8 packages:
RoHS-compliant and Halogen-free
(ECOPACK2®)
– PDIP8 package:
RoHS-compliant (ECOPACK1®)
TSSOP8 (DW)
169 mil width
SO8 (MN)
150 mil width
PDIP8 (BN)
UFDFPN8 (MB or MC)
2 x 3 mm (MLP)
Table 1.
Part
number
M93C46
Device summary
Memory
size
1 Kbit
Supply
voltage
Part
number
Memory
size
Supply
voltage
Part
number
Memory
size
16 Kbits
2.5 V to 5.5 V M93C66-W
4.5 V to 5.5 V M93C66-R
2 Kbits
2.5 V to 5.5 V M93C76-W
8 Kbits
1.8 V to 5.5 V M93C76-R
4 Kbits
2.5 V to 5.5 V M93C86-W
1.8 V to 5.5 V
2.5 V to 5.5 V
1.8 V to 5.5 V
2.5 V to 5.5 V
Supply
voltage
4.5 V to 5.5 V
4.5 V to 5.5 V M93C66
4.5 V to 5.5 V M93C86
M93C46-W
M93C56
M93C56-W
M93C56-R
October 2011
Doc ID 4997 Rev 12
1/34
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