BCP68 datasheet, PDF - EEWORLD Datasheet

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BCP68: DescriptionPower Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin; CategoryDiscrete semiconductor The transistor; File Size43KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BCP68 Overview

Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

BCP68 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	63
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 FEBRUARY 1996

7

FEATURES

* Suitable for AF drivers and output stages

* High collector current and Low V

CE(sat)

COMPLEMENTARY TYPE

PARTMARKING DETAIL

BCP69

BCP68

BCP68 25

C

BCP68

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

MIN.

25

20

5

100

10

0.5

0.6

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

25

20

5

2

1

2

-55 to +150

UNIT

V

A

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

TYP.

MAX.

UNIT

V

nA

CONDITIONS.

I

C

=10

µ

A

I

C

= 30mA *

I

E

=10

µ

A

V

CB

=25V

V

CB

=25V, T

amb

=150°C

V

EB

=5V

I

C

=1A, I

B

=100mA*

I

C

=5A, V

CE

=10V*

I

C

=1A, V

CE

=1V*

I

C

=5mA, V

CE

=10V*

I

C

=500mA, V

CE

=1V*

I

C

=500mA, V

CE

=1V*

MHz

I

C

=100mA, V

CE

=5V,

f=100MHz

µ

A

µ

A

Emitter Cut-Off Current I

EBO

V

CE(sat)

V

BE(on)

V

1.0

400

50

Static Forward Current h

FE

63

BCP68

Transfer Ratio

BCP68-25 160

Transition Frequency

f

T

250

100

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

For typical characteristics graphs see FMMT449 datasheet.

3 - 19

BCP68 Related Products

	BCP68	BCP68-25
Description	Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin	Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Is it Rohs certified?	incompatible	conform to
Reach Compliance Code	unknown	not_compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A
Collector-emitter maximum voltage	20 V	20 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	63	160
JESD-30 code	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e0	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
Base Number Matches	1	1

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