BCP69 PNP General Purpose Amplifier
January 2007
BCP69
PNP General Purpose Amplifier
4
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 1.0A.
• Sourced from Process 77.
1
3
2
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings*
T =25°C unless otherwise noted
a
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
- Continuous
Value
-20
-30
-5.0
-1.5
150
- 55 ~ +150
Units
V
V
V
A
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics*
T =25°C unless otherwise noted
a
Symbol
P
D
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Value
1.0
8.0
125
Units
W
mW/°C
°C/W
* Device mounted on FR-4 PCB 36mm
×
18mm
×
1.5mm; mounting pad for the collector lead min. 6cm
2
Electrical Characteristics*
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
T
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Test Conditions
I
C
= -10mA, I
B
= 0
I
C
= -1.0mA, I
E
= 0
I
E
= -100µA, I
C
= 0
V
CB
= -25V, I
E
= 0
V
CB
= -25V, I
E
= 0, T
j
= 150
o
C
V
EB
= -5.0V, I
C
= 0
I
C
= -5mA, V
CE
= -1.0V
I
C
= -500mA, V
CE
= -1.0V
I
C
= -1.0A, V
CE
= -1.0V
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, V
CE
= -1.0V
V
CB
= -10V, I
E
= 0, f = 1.0MHz
I
C
= -50mA, V
CE
= -10V, f = 20MHz
Min.
-20
-30
-5.0
Typ.
Max.
Units
V
V
V
-100
-10
-100
50
85
60
375
-0.5
-1.0
30
2.5
nA
uA
nA
V
CE(sat)
V
BE(on)
C
cb
h
fe
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Capacitance
Small-Signal Current Gain
V
V
pF
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BCP69 Rev. B
BCP69 PNP General Purpose Amplifier
Typical Performance Characteristics
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
300
Collector-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
V
CE
= 5.0V
250
200
150
100
- 40 °C
125 °C
0.8
0.6
0.4
0.2
0
0.01
- 40 °C
125 °C
25 °C
25 °C
50
0
0.01
I
C
0.1
1
- COLLECTOR CURRENT (A)
2
0.1
1
I
C
- COLLE CTOR CURRENT (A)
3
V
BE(O N)
- BASE-E MITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAG E (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
Base-Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
25 °C
0.8
- 40 °C
25 °C
0.6
0.6
125 °C
125 °C
0.4
V
CE
= 5.0 V
0.4
1
I
C
10
100
- COLLECTOR CURRENT ( mA)
1000
0.2
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
C
OBO
- COLLECTOR-BASE CAPACITANCE (pF)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
100
V
CB
= 2 0V
Collector-Base Capacitance
vs Collector-Base Voltage
40
f = 1.0 MHz
10
30
1
20
0.1
10
25
50
75
100
125
T
A
- AM BIENT TE MPE RATURE (
°
C)
150
0
0
10
20
V
CB
- COLLECTOR-BASE VOLTAGE (V)
30
2
BCP69 Rev. B
www.fairchildsemi.com
BCP69 PNP General Purpose Amplifier
Typical Performance Characteristics
Gain Bandwidth Product
vs Collector Current
250
V
CE
= 10V
700
1 .5
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
Power Dissipation vs
Ambient Temperature
P
C
[W], POWER DISSIPATION
P - POWER DISSIPATION (mW)
600
500
1 .0
400
300
0 .5
200
TO-92
200
150
100
50
0
D
100
0 .0
0
0
0
25
25
50
50
75
75
100
100
125
125
150
150
1
I
C
10
100
- COLLECTOR CURRENT (mA)
1000
T
a
[ C ], A M B IE
A
T T E
(
M P E R A T U R E
TEMPER
N
TURE
o
C)
o
3
BCP69 Rev. B
www.fairchildsemi.com
BCP69 PNP General Purpose Amplifier
Mechanical Dimensions
SOT-223
0.08MAX
3.00
±0.10
MAX1.80
1.75
±0.20
3.50
±0.20
(0.60)
0.65
±0.20
+0.04
0.06
–0.02
2.30 TYP
(0.95)
4.60
±0.25
0.70
±0.10
(0.95)
0.25
–0.05
+0.10
(0.60)
1
0
°
~
0
°
1.60
±0.20
(0.46)
(0.89)
6.50
±0.20
7.00
±0.30
Dimensions in Millimeters
4
BCP69 Rev. B
www.fairchildsemi.com
BCP69 PNP General Purpose Amplifier
BCP69 PNP General Purpose Amplifier
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
5
BCP69 Rev. B
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