BB417113 datasheet, PDF - EEWORLD Datasheet

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BB417113: DescriptionDIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode; CategoryDiscrete semiconductor diode; File Size56KB，2 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BB417113 Overview

DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode

BB417113 Parametric

Parameter Name	Attribute value
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	30 V
Shell connection	ISOLATED
Configuration	SINGLE
Minimum diode capacitance ratio	2
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	ULTRA HIGH FREQUENCY
JEDEC-95 code	DO-34
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	100 °C
Minimum operating temperature	-55 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum reverse current	0.01 µA
Reverse test voltage	28 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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BB417113 Related Products

	BB417113	BB417136	BB417116	BB417153	BB417133	BB417143
Description	DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode	DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode
package instruction	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Reach Compliance Code	unknown	unknow	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	30 V	30 V	30 V	30 V	30 V	30 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum diode capacitance ratio	2	2	2	2	2	2
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
frequency band	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY
JEDEC-95 code	DO-34	DO-34	DO-34	DO-34	DO-34	DO-34
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	100 °C	100 °C	100 °C	100 °C	100 °C	100 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum reverse current	0.01 µA	0.01 µA	0.01 µA	0.01 µA	0.01 µA	0.01 µA
Reverse test voltage	28 V	28 V	28 V	28 V	28 V	28 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1	1	-	-

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