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AT300811

Description
Variable Capacitance Diode, S Band to C Band, 3.9pF C(T), 30V, Silicon, Abrupt,
CategoryDiscrete semiconductor    diode   
File Size119KB,3 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

AT300811 Overview

Variable Capacitance Diode, S Band to C Band, 3.9pF C(T), 30V, Silicon, Abrupt,

AT300811 Parametric

Parameter NameAttribute value
package instructionO-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage30 V
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio4
Nominal diode capacitance3.9 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandS BAND TO C BAND
JESD-30 codeO-CEMW-N2
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor2800
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT
Base Number Matches1

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