BLC6G22LS-130 datasheet, PDF - EEWORLD Datasheet

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BLC6G22LS-130: DescriptionTRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT896-1, 3 PIN, FET RF Power; CategoryDiscrete semiconductor The transistor; File Size54KB，9 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BLC6G22LS-130 Overview

TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT896-1, 3 PIN, FET RF Power

BLC6G22LS-130 Parametric

Parameter Name	Attribute value
Parts packaging code	SOT
package instruction	SOT896-1, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-CDFM-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	225 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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BLC6G22-130; BLC6G22LS-130

UHF power LDMOS transistor

Rev. 01 — 30 January 2006

Objective data sheet

1. Product proﬁle

1.1 General description

130 W LDMOS power transistor for base station applications at frequencies from

2000 MHz to 2200 MHz.

Table 1:

Typical performance

RF performance at T

case

= 25

C in a common source class-AB production test circuit.

Mode of operation

2-carrier W-CDMA

[1]

(MHz)

2110 to 2170

(V)

L(AV)

(W)

(dB)

(%)

IMD3 ACPR

(dBc) (dBc)

−37

[1]

−40

[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier

spacing 10 MHz

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a

supply voltage of 28 V and an I

of 950 mA:

Output power = 30 W (AV)

Gain = 16 dB

Efﬁciency = 31 %

IMD3 =

−37

dBc

ACPR =

−40

dBc

Easy power control

Integrated ESD protection

Excellent ruggedness

High efﬁciency

Excellent thermal stability

Designed for broadband operation (2000 MHz to 2200 MHz)

Internally matched for ease of use

BLC6G22LS-130 Related Products

	BLC6G22LS-130	BLC6G22-130
Description	TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT896-1, 3 PIN, FET RF Power	TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT895-1, 3 PIN, FET RF Power
Parts packaging code	SOT	SOT
package instruction	SOT896-1, 3 PIN	SOT895-1, 3 PIN
Contacts	3	3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	65 V	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND	S BAND
JESD-30 code	R-CDFM-F3	R-CDFM-F3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	225 °C	225 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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