DISCRETE SEMICONDUCTORS
DATA SHEET
BLV93
UHF power transistor
Product specification
March 1993
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended
for use in mobile radio transmitters in the 900 MHz
communications band.
FEATURES
BLV93
•
multi-base structure and emitter-ballasting resistors for
an optimum temperature profile
•
internal input matching to achieve an optimum wideband
capability and high power gain
•
gold metallization ensures excellent reliability.
The transistor has a 6-lead flange envelope with a ceramic
cap (SOT-171). All leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance at T
h
= 25
°C
in a common-emitter class-B test circuit
MODE OF OPERATION
V
CE
V
12,5
9,6
f
MHz
900
900
P
L
W
8
6
>
typ.
G
p
dB
6,5
6,0
>
typ.
η
C
%
50
59
narrow band; c.w.
PINNING - SOT171A
PIN
1
2
3
4
5
6
SYMBOL
e
e
b
c
e
e
DESCRIPTION
emitter
emitter
base
collector
emitter
emitter
Fig.1 Simplified outline and symbol.
Top view
1
3
5
MAM141
handbook, halfpage
2
4
6
c
b
e
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
d.c. or average
(peak value); f
>
1 MHz
Total power dissipation
at T
mb
= 67
°C
at T
mb
= 67
°C;
f
>
1 MHz
Storage temperature
Operating junction temperature
P
tot(dc)
P
tot(rf)
T
stg
T
j
max.
max.
max.
I
C
; I
C AV
I
CM
max.
max.
V
CBOM
V
CEO
V
EBO
max.
max.
max.
BLV93
36 V
16 V
3 V
1,6 A
4,8 A
18 W
24 W
200
°C
−65
to
+150 °C
handbook, halfpage
10
MDA422
handbook, halfpage
40
MDA423
Ptot
IC
(A)
Th = 60
°C
1
(W)
32
III
24
II
16
I
8
10
−1
1
10
VCE (V)
10
2
0
0
50
100
150
Th (°C)
200
R
th mb-h
= 0,4 K/W
I Continuous operation
II Continuous operation (f > 1 MHz)
III Short-time operation during mismatch; (f > 1 MHz)
Fig.2 D.C. SOAR.
Fig.3 Power/temperature derating curves.
THERMAL RESISTANCE
Dissipation = 12 W; T
mb
= 112
°C
From junction to mounting base
(d.c. dissipation)
(r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
max.
max.
max.
7,0 K/W
5,2 K/W
0,4 K/W
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified
Collector-base breakdown voltage
open emitter; I
C
= 20 mA
Collector-emitter breakdown voltage
open base; I
C
= 40 mA
Emitter-base breakdown voltage
open collector; I
E
= 2 mA
Collector cut-off current
V
BE
= 0; V
CE
= 16 V
Second breakdown energy
L = 25 mH; f = 50 Hz; R
BE
= 10
Ω
D.C. current gain
I
C
= 1,2 A; V
CE
= 10 V
Transition frequency at f = 500 MHz
(1)
−I
E
= 1,2 A; V
CE
= 12,5 V
Collector capacitance at f = 1 MHz
I
E
= i
e
= 0; V
CB
= 12,5 V
Feed-back capacitance at f = 1 MHz
I
C
= 0; V
CE
= 12,5 V
Collector-flange capacitance
Note
1. Measured under pulse conditions: t
p
= 50
µs; δ <
1%.
C
re
C
cf
typ.
typ.
C
c
typ.
f
T
typ.
h
FE
>
E
SBR
>
I
CES
<
V
(BR)EBO
>
V
(BR)CEO
>
V
(BR)CBO
>
BLV93
36 V
16 V
3 V
10 mA
2 mJ
25
4 GHz
15 pF
9 pF
2 pF
handbook, halfpage
100
MDA424
handbook, halfpage
5
MDA425
hFE
12.5 V
80
VCE = 10 V
60
fT
(GHz)
4
3
40
2
20
1
0
0
1
2
3
IC (A)
4
0
0
−0.8
−1.6
−2.4
−3.2
IE (A)
−4
Fig.4 T
j
= 25
°C;
typical values.
Fig.5
V
CB
= 12,5 V; f = 500 MHz; T
j
= 25
°C;
typical values.
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLV93
handbook, halfpage
26
MDA426
Cc
(pF)
22
18
14
10
0
4
8
12
16
20
VCB (V)
Fig.6 I
E
= i
e
= 0; f = 1 MHz; typical values.
APPLICATION INFORMATION
R.F. performance in c.w. operation (common-emitter circuit; class-B): f = 900 MHz; T
h
= 25
°C.
MODE OF OPERATION
V
CE
V
12,5
9,6
P
L
W
8
6
<
typ.
typ.
P
S
W
1,8
1,5
1,5
>
typ.
typ.
G
p
dB
6,5
7,3
6,0
<
typ.
typ.
I
C
A
1,28
1,1
1,05
>
typ.
typ.
η
C
%
50
58
59
narrow band; c.w.
March 1993
5
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