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BC232

Description
Small Signal Bipolar Transistor, 0.4A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
CategoryDiscrete semiconductor    The transistor   
File Size69KB,1 Pages
ManufacturerMicro Electronics
Websitehttp://www.microelectr.com.hk
Download Datasheet Parametric Compare View All

BC232 Overview

Small Signal Bipolar Transistor, 0.4A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

BC232 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Maximum collector current (IC)0.4 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1

BC232 Related Products

BC232 BC223 BC387
Description Small Signal Bipolar Transistor, 0.4A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Small Signal Bipolar Transistor, 0.4A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.4 A 0.4 A 0.6 A
Collector-emitter maximum voltage 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 100 40
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.625 W 0.36 W 0.31 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 200 MHz
Base Number Matches 1 1 1
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