BC223 datasheet, PDF - EEWORLD Datasheet

BC223: DescriptionSmall Signal Bipolar Transistor, 0.4A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,; CategoryDiscrete semiconductor The transistor; File Size69KB，1 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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BC223 Overview

Small Signal Bipolar Transistor, 0.4A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

Parameter Name	Attribute value
Reach Compliance Code	unknown
Maximum collector current (IC)	0.4 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.36 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

	BC223	BC232	BC387
Description	Small Signal Bipolar Transistor, 0.4A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.4A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
Reach Compliance Code	unknown	unknown	unknown
Maximum collector current (IC)	0.4 A	0.4 A	0.6 A
Collector-emitter maximum voltage	30 V	30 V	30 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100	40
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.36 W	0.625 W	0.31 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	200 MHz
Base Number Matches	1	1	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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