BC859BR13 datasheet, PDF - EEWORLD Datasheet

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BC859BR13: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size94KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/

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BC859BR13 Overview

Transistor

BC859BR13 Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	compliant
Base Number Matches	1

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BC856 ... BC860

PNP

Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

Power dissipation – Verlustleistung

2.9

±0.1

0.4

3

1.3

1.1

PNP

250 mW

SOT-23

(TO-236)

0.01 g

Version 2011-11-07

Plastic case

Kunststoffgehäuse

±0.1

Type

Code

1

1.9

2

2.5 max

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Dimensions - Maße [mm]

1=B

2=E

3=C

Maximum ratings (T

A

= 25°C)

Grenzwerte (T

A

= 25°C)

BC856

BC857

BC860

45 V

50 V

5V

250 mW

1

)

100 mA

200 mA

-55...+150°C

-55…+150°C

BC858

BC859

30 V

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

Collector-Base-voltage – Kollektor-Basis-Spannung

Emitter-Base-voltage – Emitter-Basis-Spannung

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

B open

E open

C open

- V

CEO

- V

CBO

- V

EBO

P

tot

- I

C

- I

CM

T

j

T

S

65 V

80 V

Characteristics (T

j

= 25°C)

Min.

DC current gain – Kollektor-Basis-Stromverhältnis

- V

CE

= 5 V, - I

C

= 10 µA

Group A

Group B

Group C

Group A

Group B

Group C

H

FE

h

FE

h

FE

H

FE

h

FE

h

FE

- V

CEsat

- V

CEsat

- V

BEsat

- V

BEsat

–

125

220

420

–

Kennwerte (T

j

= 25°C)

Typ.

90

150

270

180

290

520

–

700 mV

900 mV

Max.

–

250

475

800

300 mV

650 mV

–

- V

CE

= 5 V, - I

C

= 2 mA

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung

2

)

I

C

= 10 mA, I

B

= 0.5 mA

I

C

= 100 mA, I

B

= 5 mA

Base-Emitter saturation voltage – Basis-Sättigungsspannung

2

)

I

C

= 10 mA, I

B

= 0.5 mA

I

C

= 100 mA, I

B

= 5 mA

1

2

Mounted on P.C. board with 3 mm

2

copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

2

Kupferbelag (Lötpad) an jedem Anschluss

Tested with pulses t

p

= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t

p

= 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

1

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