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BC859-B-RTK/PU

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size40KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
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BC859-B-RTK/PU Overview

Small Signal Bipolar Transistor,

BC859-B-RTK/PU Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
・For
Complementary with NPN Type BC849/850
・Suffix
U
: Qualified to AEC-Q101.
ex) BC860-B-RTK/PU
A
G
H
BC859/860
EPITAXIAL PLANAR PNP TRANSISTOR
L
E
B
L
2
1
3
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
BC859
BC860
BC859
BC860
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
RATING
-30
-50
-30
-45
-5
-100
350
150
-55½150
UNIT
Q
P
P
V
C
N
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
V
V
mA
mW
M
1. EMITTER
2. BASE
3. COLLECTOR
P
C
* : Package Mounted On 99.5% Alumina 10×8×0.6mm.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
BC859
BC860
BC859
BC860
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
V
BE(ON)
1
V
BE(ON)
2
V
CE(sat)
1
V
CE(sat)
2
V
BE(sat)
1
V
BE(sat)
2
f
T
C
ob
NF
A:125½250,
B:220½475
TEST CONDITION
I
C
=-10mA, I
B
=0
MIN.
-30
-45
-30
-50
-5
-
125
-0.6
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-0.65
-
-0.075
-0.25
-0.7
-0.85
150
4.5
-
-
4.0
MAX.
-
-
-
-
-
-15
475
-0.75
-0.82
-0.3
-0.65
-
-
V
UNIT
V
I
C
=-10μ I
E
=0
A,
I
E
=-10μ I
C
=0
A,
V
CB
=-30V, I
E
=0
I
C
=-2mA, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-10mA, V
CE
=-5V
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-5mA
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-5mA
I
C
=-10mA, V
CE
=-5V, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
I
C
=-200μ V
CE
=-5V
A,
Rg=10kΩ, f=1kHz
K
SOT-23
J
D
V
V
nA
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
V
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note : h
FE
Classification
V
MHz
pF
dB
Marking
Lot No.
MARK SPEC
TYPE
MARK
BC859A
4A
BC859B
4B
BC860A
4E
BC860B
4G
Type Name
2018. 04. 10
Revision No : 3
1/2

BC859-B-RTK/PU Related Products

BC859-B-RTK/PU BC860-B BC859-RTK/PU BC859-A-RTK/PU BC859-A BC860-A-RTK/PU BC860-B-RTK/PU BC859-B
Description Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknow
Maker - - KEC KEC KEC KEC KEC KEC
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