BC869-25 datasheet, PDF - EEWORLD Datasheet

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BC869-25: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size238KB，1 Pages; ManufacturerDiodes Incorporated

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BC869-25 Overview

Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN

BC869-25 Parametric

Parameter Name	Attribute value
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
Base Number Matches	1

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PART OBSOLETE - USE BCX6925

SOT89 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 - JANUARY 1996

7

FEATURES

* SUITABLE FOR GENERAL AF APPLICATIONS AND

CLASS B AUDIO OUTPUT STAGES UP TO 3W

* HIGH h

FE

AND LOW SATURATION VOLTAGE

COMPLEMENTARY TYPE -

PARTMARKING DETAILS -

BC868 (NPN)

BC869

- CEC

BC869-16 - CHC

BC869-25 - CJC

BC869

C

E

C

B

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

-25

-20

-5

-2

-1

1

-65 to +150

UNIT

V

A

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

Static Forward Current

Transfer Ratio

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(on)

h

FE

BC869-16

BC869-25

Transition Frequency

Output Capacitance

f

T

C

obo

50

85

60

100

160

60

45

MIN.

-25

-20

-5

-10

-1

-10

-0.5

-1.0

TYP.

MAX.

UNIT

V

µA

mA

µA

V

CONDITIONS.

I

C

=-100µA

I

C

=-10mA*

I

E

=-10µA

V

CB

= -25V

V

CB

= -25V,T

amb

=150

o

C

V

EB

=-5V

I

C

=-1A,I

B

=-100mA*

I

C

=-1A, V

CE

=-1V*

I

C

=-5mA, V

CE

=-10V*

I

C

=-500mA, V

CE

=-1V*

I

C

=-1A, V

CE

=-1V*

I

C

=-500mA, V

CE

=-1V*

I

C

=-500mA, V

CE

=-1V*

MHz

pF

I

C

=-10mA, V

CE

=-5V

f = 35MHz

V

CB

=-10V, f=1MHz

375

250

375

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤2%

For typical characteristics graphs see FMMT549 datasheet

3 - 12

BC869-25 Related Products

	BC869-25	BC869
Description	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN
Parts packaging code	SOT-89	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Contacts	3	3
Reach Compliance Code	unknown	compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A
Collector-emitter maximum voltage	20 V	20 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	160	60
JESD-30 code	R-PSSO-F3	R-PSSO-F3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	60 MHz	60 MHz
Base Number Matches	1	1

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