BD807 datasheet, PDF - EEWORLD Datasheet

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BD807: DescriptionPower Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size67KB，2 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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BD807 Overview

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

BD807 Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1.5 MHz
Base Number Matches	1

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^zmi-Conduckoi LPT.odu.ctz, One..

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

FELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Silicon NPN Power Transistor

BD807

DESCRIPTION

• DC Current Gain -

: h

F E

=30(Min.)@l

c

=2A

• Collector-Emitter Sustaining Voltage-

: V

CE

o(sus)= 60V(Min)

• Complement to Type BD808

APPLICATIONS

• Designed for use in high power audio amplifiers utilizing

complementary or quasi complementary circuits.

IP

•1

,""•«,

2

L,/

r*

3

PIN 1.BASE

2. COLLECTOR

3.QV1ITTER

TO-220C package

i ;

1 2 3

*

B -

-"

c

ABSOLUTE MAXIMUM RATINGS(T

a

=25'C)

SYMBOL

VCBO

VCEO

VEBO

Ic

IB

PC

Tj

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current

Collector Power Dissipation

@ T

C

=25°C

Junction Temperature

Storage Temperature Range

VALUE

70

UNIT

V

A

' * '

rr-ert

:

P

M.OOS

J506

*

H" ,

60

5

10

V

A

t

|;

mm

so4-<

t

S

y

Jl

-*{ C

C

*• [*- J

4

6

90

150

A

W

WIN

DIM

MAX

A 15.70 15.90

9.90 10.10

B

4.20

C

4.40

0.70

D

0.90

3.40

3.60

F

G

4.98

5.18

2.70

2.90

H

J

0.44

0.46

K 13.20 13.40

1.30

1.10

L

2.90

Q

2.70

2.50

2.70

R

1.29

S

1.31

U

6.65

6.45

8.66

V

8.86

°C

Tstg

-55-150

°c

THERMAL CHARACTERISTICS

SYMBOL

Rth j-c

PARAMETER

Thermal Resistance, Junction to Case

MAX

1.39

UNIT

'CM/

N.I Semi-Conductors reserves the right to change test conditions, parameter limits ami package dimensions without

noiiee. Infoi'mation Curnislied hy Nl Seiiii-Condiictors is believed 10 he huili iiccurate und reliable a! llie time ot'i'.oin;.

lo pre->s. l l o \ s e \ e r . M Seiiii-Condiiclurs iissumes no respoiiMbilih lor anv errors or oiiiis>ioiis discovered HI ils n--e.

N I Si/mi

-(

iMidneloi s fi'a'iiriK'.i"' tii'-lomers In \v that dat;hlleeli are eiiin.-iil he lore plating ordei s

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