BUF832F datasheet, PDF - EEWORLD Datasheet

BUF832F: DescriptionTRANSISTOR,BJT POWER MODULE,INDEPENDENT,800V V(BR)CEO,48A I(C); CategoryDiscrete semiconductor The transistor; File Size209KB，5 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BUF832F Overview

TRANSISTOR,BJT POWER MODULE,INDEPENDENT,800V V(BR)CEO,48A I(C)

Parameter Name	Attribute value
Reach Compliance Code	compliant
Maximum collector current (IC)	48 A
Maximum landing time (tf)	100 ns
Number of components	1
Maximum operating temperature	150 °C
Maximum power dissipation(Abs)	300 W
VCEsat-Max	2.2 V
Base Number Matches	1

	BUF832F	BUF832V
Description	TRANSISTOR,BJT POWER MODULE,INDEPENDENT,800V V(BR)CEO,48A I(C)	TRANSISTOR,BJT POWER MODULE,INDEPENDENT,800V V(BR)CEO,48A I(C)
Reach Compliance Code	compliant	compliant
Maximum collector current (IC)	48 A	48 A
Maximum landing time (tf)	100 ns	100 ns
Number of components	1	1
Maximum operating temperature	150 °C	150 °C
Maximum power dissipation(Abs)	300 W	300 W
VCEsat-Max	2.2 V	2.2 V
Base Number Matches	1	1

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