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BUK105-50L

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size831KB,11 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric Compare View All

BUK105-50L Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BUK105-50L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)26 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

BUK105-50L Related Products

BUK105-50L BUK105-50LP BUK105-50SP
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown
Configuration Single Single Single
Maximum drain current (Abs) (ID) 26 A 26 A 26 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 75 W 75 W 75 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1 -
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