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BTS410H

Description
Power Field-Effect Transistor, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size478KB,12 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BTS410H Overview

Power Field-Effect Transistor, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BTS410H Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T5
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum drain-source on-resistance0.22 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T5
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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