BUK655-450B datasheet, PDF - EEWORLD Datasheet

BUK655-450B: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size456KB，5 Pages; ManufacturerNorth American Philips Discrete Products Div

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BUK655-450B Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	5.7 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	100 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

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