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BUZ50B-220M

Description
1.5A, 1000V, 10ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size121KB,4 Pages
ManufacturerSEMELAB
Download Datasheet Parametric View All

BUZ50B-220M Overview

1.5A, 1000V, 10ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN

BUZ50B-220M Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-257AB
package instructionFLANGE MOUNT, S-MSFM-P3
Contacts3
Reach Compliance Codecompliant
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)1.5 A
Maximum drain-source on-resistance10 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AB
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)4.5 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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