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BA221

Description
0.2A, 30V, SILICON, SIGNAL DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size97KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BA221 Overview

0.2A, 30V, SILICON, SIGNAL DIODE, DO-35

BA221 Parametric

Parameter NameAttribute value
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current4 A
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse current0.2 µA
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
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