HiRel
NPN Silicon RF Transistor
Features
¥
HiRel
Discrete and Microwave Semiconductor
¥ For low power amplifiers at collector currents from
0.2 to 2.5 mA
¥ Hermetically sealed microwave package
¥
f
T
= 6.5 GHz,
F
= 2.6 dB at 2 GHz
¥
qualified
¥ ESA/SCC Detail Spec. No.: 5611/006
BFY 180
Micro-X1
ESD: E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
Type
BFY 180 (ql)
Marking
-
Ordering Code
see below
H: High Rel Quality,
S: Space Quality,
Pin Configuration
C
E
B
E
Package
Micro-X1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q97301013
Ordering Code: on request
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q97111419
(see
Chapter Order Instructions
for ordering example)
Table 1
Parameter
Collector-emitter voltage
Collector-emitter voltage,
V
BE
= 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
S
£
176
°
C
2)
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction soldering point
2)
1)
2)
Maximum Ratings
Symbol
Limit Values
8
15
15
2
4
0.5
1)
30
200
-
65 É
+
200
-
65 É
+
200
< 805
Unit
V
V
V
V
mA
mA
mW
°
C
°
C
°
C
K/W
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
op
T
stg
R
th JS
The maximum permissible base current for
V
FBE
measurements is 3 mA (spot-measurement duration < 1 s).
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Draft A04 1998-04-01
BFY 180
Electrical Characteristics
Table 2
Parameter
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Collector-emitter cutoff current
V
CE
= 8 V,
I
B
= 0.05
m
A
3)
Collector-base cutoff current
V
CB
= 8 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
Base-emitter forward voltage
I
E
= 3 mA,
I
C
= 0
DC current gain
I
C
= 0.25 mA,
V
CE
= 1 V
3)
DC Characteristics
at
T
A
= 25
°
C unless otherwise specified
Symbol
min.
Limit Values
typ.
-
-
-
-
-
-
100
max.
100
50
50
25
0.5
1
175
m
A
m
A
nA
m
A
m
A
V
-
-
-
-
-
-
-
30
Unit
I
CBO
I
CEX
I
CBO
I
EBO
I
EBO
V
FBE
h
FE
This test assures
V
(BR)CE0
> 8 V.
Semiconductor Group
2
Draft A04 1998-04-01
BFY 180
Table 3
Parameter
AC Characteristics
at
T
A
= 25
°C
unless otherwise specified
Symbol
min.
Limit Values
typ.
6.5
0.15
0.34
0.25
2.6
max.
-
0.24
-
0.4
3.2
GHz
pF
pF
pF
dB
5.5
-
-
-
-
Unit
Transition frequency
I
C
= 0.2 mA,
V
CE
= 5 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 5 V,
V
BE
= vbe = 0,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 5 V,
V
BE
= vbe = 0,
f
= 1 MHz
f
T
C
CB
C
CE
Emitter-base capacitance
C
EB
V
EB
= 0.5 V,
V
CB
= vcb = 0,
f
= 1 MHz
Noise figure
I
C
= 2 mA,
V
CE
= 5 V,
f
= 2 GHz,
Z
S
=
Z
Sopt
Power gain
I
C
= 2 mA,
V
CE
= 5 V,
f
= 2 GHz,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
Transducer gain
I
C
= 2 mA,
V
CE
= 5 V,
f
= 2 GHz,
Z
S
=
Z
L
= 50
W
4)
F
G
ma 4)
½S
21e
½
2
12
13.5
-
dB
6.5
8
-
dB
G
ma
=
S21
(
k
Ð
k
Ð
1
),
G
ms
=
S21
----------
-
----------
-
S12
S12
2
Semiconductor Group
3
Draft A04 1998-04-01
BFY 180
Order Instructions
Full type variant including quality level must be specified by the orderer. For
HiRel
Discrete and Microwave Semiconductors the ordering code specifies device family and
quality level.
Ordering Form:
Ordering Code: QÉ
BFY180 (x) (ql)
(ql): Quality Level
Ordering Example:
Ordering Code: Q97111419
BFY180 ES
For BFY180 in ESA Space Quality Level
Further Information
See our WWW-Pages:
Ð Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
Ð
HiRel
Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: martin.wimmers@hl.siemens.de
Semiconductor Group
4
Draft A04 1998-04-01
BFY 180
1.05
±0.25
1.02
±0.1
2
0.76
0.5
±0.1
XY
3
4
1.78
4.2
-0.2
1
0.1
+0.05
-0.03
GXM05552
Figure 1
Micro-X1 Package
Semiconductor Group
5
ø1.65
±0.1
Draft A04 1998-04-01
京公网安备 11010802033920号
EEWORLD
